Volume manufacturing of high-power diode lasers using 6” wafers

Wang, Jun; Tan, Shaoyang; Liu, Heng; Li, Bo; Hu, Yiwen; Zhao, Run; Xiao, Xiao; Cheng, Yang; Guo, Yintao; Zhao, Wu; Zhang, Lichen; Miao, Pei; Guo, Lu’an; Deng, Guoliang; Yang, Huajun; Hao, Zhou; Zhang, Hong; Liao, Xinsheng

doi:10.1117/12.2610727

Cited by 4 publications

(3 citation statements)

References 2 publications

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“…Structure optimized laser diodes with 980-nm wavelength, 230 μm emitter width and 4.5mm cavity length are fabricated in Suzhou Everbright Photonics Co., Ltd. established 6" GaAs wafers integrated production line [14]. The laser diode layer structure is grown using MOCVD reactors with further process development for high uniformity and better control.…”

Section: Device Performancementioning

confidence: 99%

Lateral brightness improvement of high-power semiconductor laser diode

Tan

Liu

Wang

et al. 2023

High-Power Diode Laser Technology XXI

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High power diode lasers are widely used as the pump sources for fiber lasers and solid-state lasers, or the light sources for direct diode laser systems. The lateral brightness of diode lasers is the key parameter for the optical system with fiber coupling. The lateral brightness of a typical broad area diode laser is limited by the far-field booming rather than optical power at high operation current. In this paper, the far-field booming theory will be analyzed based on experimental observation of carrier density distribution and temperature profile along lateral direction. The temperature nonuniformity and the resulting thermal lens effect are supposed to be the dominate factor. We develop a novel high brightness laser diode structure with properly designed contact metal layer to modify the thermal conductivity profile. The thermal simulation indicate that the thermal lens effect is suppressed and the lateral far-field angle is reduced. Laser diodes with 230 μm emitter width and optimized structure are fabricated and the optical properties is investigated. The lateral far-field angle is reduced at current over 40A The optical power with same lateral brightness is increased up to 20%. This structure gives a promising high brightness solution for high power laser diode with power over 35 W. Chips with longer cavity length obtain higher power up to 51W.

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Section: Device Performancementioning

confidence: 99%

Lateral brightness improvement of high-power semiconductor laser diode

Tan

Liu

Wang

et al. 2023

High-Power Diode Laser Technology XXI

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“…The cladding layers on both sides are made of Al 0.65 Ga 0.35 As material. The device is prepared using metal-organic chemical vapor (MOCVD) epitaxial growth technique and is further fabricated through photolithography to form single emitters with a length of 5mm and a width of 100µm [48]. The back facet of the device is coated with a high reflectivity film of 99.9%, while the front facet has a 1.5% antireflection film.…”

Section: Methodsmentioning

confidence: 99%

Analysis of Threshold Characteristics of Short-Wavelength Semiconductor Lasers

Wang,

Tan,

Zhou

et al. 2024

IEEE Photonics J.

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Existing high-power semiconductor lasers widely use asymmetric large cavity structures or designs with short cavity lengths to enhance device performance, inevitably increasing the device threshold current density and suppressing further improvement of device performance. We have utilized rate equations analysis to investigate the impact of threshold current density on the threshold characteristic temperature of GaAsbased laser diodes at short wavelengths. A simplified carrier escape model has been employed, which is more accurate compared to the classical model of thermal carrier emission. Compared to long-wavelength laser diodes, short-wavelength laser diodes exhibit higher temperature stability due to their smaller Auger recombination coefficients. Increased internal losses caused by carrier escape and decreased injection efficiency are the main reasons for the decrease in threshold characteristic temperature with increasing temperature. The increase in threshold significantly enhances carrier escape, leading to a decrease in the threshold characteristic temperature and an increase in sensitivity to temperature. Moreover, high thresholds limit the increase in the device's decoupling factor, causing a decrease in current inject efficiency and further degradation of device performance. By increasing the barrier height, carrier escape can be effectively suppressed, thereby enhancing device performance. The simulation results agree well with the experimental data of InAlGaAs laser diodes at a wavelength of 780nm, accurately predicting the threshold characteristics of devices with different cavity lengths at various temperatures.

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“…Innovative or optimized epitaxial structures have shown advantages for a continuous power increase of GaAs-based LDs [10], [19], [20], [21], [22], [23], [24]. A 9xx-nm high-power LD with 230 μm emitter width was reported to achieve 45 W at 25 • C [25]. Improving the operating power and PCE of the LDs can reduce the cost of the laser systems.…”

mentioning

confidence: 99%

48 W Continuous-Wave Output From a High- Efficiency Single Emitter Laser Diode at 915 nm

Liu

Yang

Zhao³

et al. 2022

IEEE Photon. Technol. Lett.

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Improving the power and efficiency of 9xx-nm 1 broad-area laser diodes has a great help in reducing the cost 2 of laser systems and expanding applications. This letter presents 3 an optimized epitaxial structure with high power and conversion 4 efficiency. Laser diodes with 230 µm emitter width and 5 mm 5 cavity length deliver continuous-wave output power up to 48.5 W 6 at 48 A, 30 • C, the highest power reported for 9xx-nm single 7 emitter lasers so far. The slope efficiency is as high as 1.23 W/A 8 due to a low internal optical loss of 0.31 cm −1 and a high internal 9 efficiency of 96%. The maximum power conversion efficiency 10 reaches 72.6% at 15.3 W and 67.3% at the operating power of 11 30 W under a heatsink temperature of 25 • C. Life test results 12 show no failure in 1000 hours for 55 laser diodes. 13 Index Terms-Semiconductor laser, laser diode, high power, 14 high efficiency, 915 nm. 15 I. INTRODUCTION 16 H IGH power 9xx-nm laser diodes (LDs) are widely used 17 as pump sources for fiber lasers and light sources for 18 direct-diode systems in various industrial applications [1], [2], 19 [3], [4]. 915 nm pump LDs are the major choice for fiber 20 lasers because of their broad absorption band for Yb-doped 21 fibers [1], which has a big advantage for working conditions 22 in a large temperature range. A high-performance laser system 23 with an output power of 1-10 kW needs a large quantity 24 (100 to 1000) of pump LDs. The cost of these systems relies 25 dramatically on the LDs, which gives a stringent requirement 26 for the performance, quality, and reliability of the LD chips 27 [5], [6]. LDs with more than 30 W output power com-28 bined with power conversion efficiency (PCE) above 65% 29 can provide a cost-effective high-power laser module. The 30 output power is mainly limited by the catastrophic optical

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Volume manufacturing of high-power diode lasers using 6” wafers

Cited by 4 publications

References 2 publications

Lateral brightness improvement of high-power semiconductor laser diode

Lateral brightness improvement of high-power semiconductor laser diode

Analysis of Threshold Characteristics of Short-Wavelength Semiconductor Lasers

48 W Continuous-Wave Output From a High- Efficiency Single Emitter Laser Diode at 915 nm

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