High Reliability 808nm Laser Diodes With Output Power Over 19W Under CW Operation

Wang, Bangguo; Tan, Shaoyang; Liang, Zhou; Zhang, Zhicheng; Xiao, Yao; Liu, Wuling; Gou, Yudan; Deng, Guoliang; Wang, Jun

doi:10.1109/lpt.2022.3156913

Cited by 5 publications

(3 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High-power broad-area laser diodes (HP-BALs) have emerged as primary pump sources for fiber and solid-state laser systems for diverse industrial applications, owing to their large power conversion efficiency (PCE), reliability, and cost-effectiveness [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. In the dynamic landscape of fiber lasers and solid-state lasers, there is an increasing demand for such lasers, capable of delivering even larger output power and PCE.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Double-Junction Cascaded GaAs-Based Broad-Area Diode Lasers with 132W Continuous Wave Output Power

Wang,

Tan,

Shao

et al. 2024

Photonics

Self Cite

View full text Add to dashboard Cite

Improving the output power and efficiency of broad-area diode lasers is a prerequisite for the further development of fiber lasers, solid-state laser industries, and direct semiconductor laser applications. At present, the large amount of Joule heat generated by large drive currents and limited wall-plug efficiency presents the largest challenge for improving these lasers. In this paper, a multi-junction cascade laser with low Joule heat generation is demonstrated, showing large power and conversion efficiency. We fabricated devices with different junction numbers and compared their output power. We present double-junction lasers emitting at ~915 nm with an emitter width of 500 μm, delivering 132.5 W continuous wave output power at 70 A, which is the highest power reported so far for any single-emitter laser. The power conversion efficiencies are 66.7% and 60%, at 100 W and 132 W, respectively.

show abstract

Section: Introductionmentioning

confidence: 99%

“…In the last 20 years, breakthroughs in terms of both power and efficiency have been reported [7][8][9][10][11][12][13]. In 2008, Petrescu-Prahova et al demonstrated BALs with 100 µm emitter width, operating at room temperature, and achieving an output power of 25.3 W from both facets [14].…”

Section: Introductionmentioning

confidence: 99%

Double-Junction Cascaded GaAs-Based Broad-Area Diode Lasers with 132W Continuous Wave Output Power

Wang,

Tan,

Shao

et al. 2024

Photonics

Self Cite

View full text Add to dashboard Cite

show abstract

“…In the past 30 years, semiconductor lasers have made rapid advancements [1]. Taking 800nm as an example, the single chip output power has exceeded 19W, and the chip conversion efficiency has exceeded 71% [2], [3]. Currently, high-power semiconductor lasers widely adopt an asymmetric large optical cavity structure to improve the output power of the devices [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Threshold Characteristics of Short-Wavelength Semiconductor Lasers

Wang,

Tan,

Zhou

et al. 2024

IEEE Photonics J.

Self Cite

View full text Add to dashboard Cite

Existing high-power semiconductor lasers widely use asymmetric large cavity structures or designs with short cavity lengths to enhance device performance, inevitably increasing the device threshold current density and suppressing further improvement of device performance. We have utilized rate equations analysis to investigate the impact of threshold current density on the threshold characteristic temperature of GaAsbased laser diodes at short wavelengths. A simplified carrier escape model has been employed, which is more accurate compared to the classical model of thermal carrier emission. Compared to long-wavelength laser diodes, short-wavelength laser diodes exhibit higher temperature stability due to their smaller Auger recombination coefficients. Increased internal losses caused by carrier escape and decreased injection efficiency are the main reasons for the decrease in threshold characteristic temperature with increasing temperature. The increase in threshold significantly enhances carrier escape, leading to a decrease in the threshold characteristic temperature and an increase in sensitivity to temperature. Moreover, high thresholds limit the increase in the device's decoupling factor, causing a decrease in current inject efficiency and further degradation of device performance. By increasing the barrier height, carrier escape can be effectively suppressed, thereby enhancing device performance. The simulation results agree well with the experimental data of InAlGaAs laser diodes at a wavelength of 780nm, accurately predicting the threshold characteristics of devices with different cavity lengths at various temperatures.

show abstract

Reduction of nonradiative recombination for high-power 808 nm laser diode adopting InGaAsP/InGaAsP/GaAsP active region

Zhang

Dong

et al. 2023

Optics Communications

View full text Add to dashboard Cite

High Reliability 808nm Laser Diodes With Output Power Over 19W Under CW Operation

Cited by 5 publications

References 20 publications

Double-Junction Cascaded GaAs-Based Broad-Area Diode Lasers with 132W Continuous Wave Output Power

Double-Junction Cascaded GaAs-Based Broad-Area Diode Lasers with 132W Continuous Wave Output Power

Analysis of Threshold Characteristics of Short-Wavelength Semiconductor Lasers

Reduction of nonradiative recombination for high-power 808 nm laser diode adopting InGaAsP/InGaAsP/GaAsP active region

Contact Info

Product

Resources

About