Selective loss tailoring of broad-area diode lasers

Su, Jiaxin; Tong, Cunzhu; Wang, Lijie; Wang, Yanjing; Lü, Hongliang; Wang, Jun; Tan, Shaoyang; Li, Sensen; Peng, Haijun

doi:10.35848/1347-4065/abd70c

Cited by 7 publications

(2 citation statements)

References 32 publications

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“…the optical mode and gain / loss distribution along lateral direction is modulated, higher order mode power lasing or the power percentage of high order mode increase, and lead to the lateral farfield booming. Many efforts have been done to suppress these effects including mode filtering microstructures, deep proton injection gain tailoring structure and thermal paths optimization structures [10][11][12][13]. Among these structures the thermal paths optimization structures directly suppress the thermal lens effect and reduce the far field without sacrificing optical power.…”

Section: Introductionmentioning

confidence: 99%

Lateral brightness improvement of high-power semiconductor laser diode

Tan

Liu

Wang

et al. 2023

High-Power Diode Laser Technology XXI

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High power diode lasers are widely used as the pump sources for fiber lasers and solid-state lasers, or the light sources for direct diode laser systems. The lateral brightness of diode lasers is the key parameter for the optical system with fiber coupling. The lateral brightness of a typical broad area diode laser is limited by the far-field booming rather than optical power at high operation current. In this paper, the far-field booming theory will be analyzed based on experimental observation of carrier density distribution and temperature profile along lateral direction. The temperature nonuniformity and the resulting thermal lens effect are supposed to be the dominate factor. We develop a novel high brightness laser diode structure with properly designed contact metal layer to modify the thermal conductivity profile. The thermal simulation indicate that the thermal lens effect is suppressed and the lateral far-field angle is reduced. Laser diodes with 230 μm emitter width and optimized structure are fabricated and the optical properties is investigated. The lateral far-field angle is reduced at current over 40A The optical power with same lateral brightness is increased up to 20%. This structure gives a promising high brightness solution for high power laser diode with power over 35 W. Chips with longer cavity length obtain higher power up to 51W.

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Section: Introductionmentioning

confidence: 99%

Lateral brightness improvement of high-power semiconductor laser diode

Tan

Liu

Wang

et al. 2023

High-Power Diode Laser Technology XXI

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“…By designing the ridge waveguide in a bent shape [6], researchers can control the waveguide's curvature to manage the loss of higher-order lateral modes. Alternatively, microstructures are etched at the edges of the broad ridge waveguide to enable loss clipping of higher-order lateral modes [7,8]. However, these methods have the drawback of causing significant loss to the fundamental lateral mode while suppressing higher-order lateral modes, or they introduce complex design, making fabrication more challenging.…”

Section: Introductionmentioning

confidence: 99%

High-power single-mode semiconductor lasers based on supersymmetric structures around 795 nm

Wang,

Dong

et al. 2023

Optical Design and Testing XIII

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High-power single-mode laser diodes around 795 nm are widely used in applications such as Rb atomic clocks and nuclear magnetic resonance imaging. We simulate a high-power single-mode semiconductor laser around 795 nm based on a supersymmetric structure. In the lateral direction, the mode stability characteristics are investigated by varying the three waveguides widths and the distances between the middle main waveguide and the two sub-waveguides. Since the left and right waveguides have different widths, the optimal distance from them to the main waveguide is also different. In order to ensure the single-mode operating of the laser, there is a pair of optimized distances from the left and right waveguides to the main waveguide. The distances from the left and right waveguides to the main waveguide are 1 µm and 1.2 µm, respectively, when the widths of the left waveguide, right waveguide and main waveguide are set as 2.3 µm, 3.5 µm and 6 µm, respectively. In the longitudinal direction, a laterally-coupled grating structure is used to achieve longitudinal mode selection. Such lasers are expected to be the next generation of high-power, narrow-linewidth, singlemode laser diodes.

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Single-shot complete spatiotemporal characterization of a narrow-band ultrashort pulse based on time slice coherent modulation imaging

Pan,

Xu,

et al. 2024

Optics and Lasers in Engineering

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Selective loss tailoring of broad-area diode lasers

Cited by 7 publications

References 32 publications

Lateral brightness improvement of high-power semiconductor laser diode

Lateral brightness improvement of high-power semiconductor laser diode

High-power single-mode semiconductor lasers based on supersymmetric structures around 795 nm

Single-shot complete spatiotemporal characterization of a narrow-band ultrashort pulse based on time slice coherent modulation imaging

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