Development of a 350 W, 50 μm, 0.15 NA wavelength stabilized fiber coupled laser diode module for pumping Yb-doped fiber laser

Yu, Hao; Tan, Shaoyang; Pan, Huadong; Sun, Shoujin; Li, Juan; Wang, Jun

doi:10.1117/12.2544336

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…High power diode lasers are widely used as the pump sources for fiber lasers and solid-state lasers, or the light sources for direct diode laser systems [1][2][3][4]. The lateral brightness of diode lasers is the key parameter for the optical system with fiber coupling.…”

Section: Introductionmentioning

confidence: 99%

Lateral brightness improvement of high-power semiconductor laser diode

Tan

Liu

Wang

et al. 2023

High-Power Diode Laser Technology XXI

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High power diode lasers are widely used as the pump sources for fiber lasers and solid-state lasers, or the light sources for direct diode laser systems. The lateral brightness of diode lasers is the key parameter for the optical system with fiber coupling. The lateral brightness of a typical broad area diode laser is limited by the far-field booming rather than optical power at high operation current. In this paper, the far-field booming theory will be analyzed based on experimental observation of carrier density distribution and temperature profile along lateral direction. The temperature nonuniformity and the resulting thermal lens effect are supposed to be the dominate factor. We develop a novel high brightness laser diode structure with properly designed contact metal layer to modify the thermal conductivity profile. The thermal simulation indicate that the thermal lens effect is suppressed and the lateral far-field angle is reduced. Laser diodes with 230 μm emitter width and optimized structure are fabricated and the optical properties is investigated. The lateral far-field angle is reduced at current over 40A The optical power with same lateral brightness is increased up to 20%. This structure gives a promising high brightness solution for high power laser diode with power over 35 W. Chips with longer cavity length obtain higher power up to 51W.

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Section: Introductionmentioning

confidence: 99%

Lateral brightness improvement of high-power semiconductor laser diode

Tan

Liu

Wang

et al. 2023

High-Power Diode Laser Technology XXI

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“…At the same time, internal losses increase and internal quantum efficiency decreases [5]. For semiconductor lasers used in pumping applications, it is often necessary for the device to operate under continuous current conditions to provide sufficiently high average power output [9]- [11]. In this case, the actual junction temperature of the device is much higher than the temperature of the heat sink.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Threshold Characteristics of Short-Wavelength Semiconductor Lasers

Wang,

Tan,

Zhou

et al. 2024

IEEE Photonics J.

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Existing high-power semiconductor lasers widely use asymmetric large cavity structures or designs with short cavity lengths to enhance device performance, inevitably increasing the device threshold current density and suppressing further improvement of device performance. We have utilized rate equations analysis to investigate the impact of threshold current density on the threshold characteristic temperature of GaAsbased laser diodes at short wavelengths. A simplified carrier escape model has been employed, which is more accurate compared to the classical model of thermal carrier emission. Compared to long-wavelength laser diodes, short-wavelength laser diodes exhibit higher temperature stability due to their smaller Auger recombination coefficients. Increased internal losses caused by carrier escape and decreased injection efficiency are the main reasons for the decrease in threshold characteristic temperature with increasing temperature. The increase in threshold significantly enhances carrier escape, leading to a decrease in the threshold characteristic temperature and an increase in sensitivity to temperature. Moreover, high thresholds limit the increase in the device's decoupling factor, causing a decrease in current inject efficiency and further degradation of device performance. By increasing the barrier height, carrier escape can be effectively suppressed, thereby enhancing device performance. The simulation results agree well with the experimental data of InAlGaAs laser diodes at a wavelength of 780nm, accurately predicting the threshold characteristics of devices with different cavity lengths at various temperatures.

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Wide dynamic laser ranging based on diode laser and photon-counting techniques

et al. 2021

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Ultrafast diode laser and photon-counting techniques were united to solve the trade-off between the dynamic range and high precision in the time of flight (TOF) laser ranging. Based on the direct time of flight (D-TOF) laser ranging method, we developed a wide dynamic laser ranging system. The peak power of the emission laser can reach 70 W, the width of pulsed laser is less than 2 ns, and the repetition rate can reach 500 kHz. The experimental results show that the precision is 7.5 mm when the echo signal is saturated. The maximum range can reach kilometer level, the accuracy is within 30 cm, and the repetition rate of measurement can reach 100 kHz. The system has the advantages of small size, low cost, fast detection speed, and high accuracy, which can be used in the fields of dynamic target measurement and high-speed environment perception.

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Development of a 350 W, 50 μm, 0.15 NA wavelength stabilized fiber coupled laser diode module for pumping Yb-doped fiber laser

Cited by 4 publications

References 8 publications

Lateral brightness improvement of high-power semiconductor laser diode

Lateral brightness improvement of high-power semiconductor laser diode

Analysis of Threshold Characteristics of Short-Wavelength Semiconductor Lasers

Wide dynamic laser ranging based on diode laser and photon-counting techniques

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