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Epinephrine sprayed on the papilla may be effective to prevent PEP. Female patients (aged ≥ 18 years and < 35 years) (7/40, 17.5%), common bile duct diameter < 10 mm (27/40, 67.5%), previous cholangitis (3/40, 7.5%), body mass index ≥ 24 (22/40, 55%), and/or serum triglycerides ≥ 5.65 mmol/L (6/40, 15%), might be risk factors for post-ERCP pancreatitis, but are not statistically significant in the study.

A novel star-shaped cardanol oligomer (HCPP) derived from cardanol and hexachlorocyclotriphosphazene was prepared, and its structure was identified using proton nuclear magnetic resonance ( 1 H NMR, 13 C NMR, 31 P NMR) and Fourier transform infrared spectroscopy (FTIR) techniques. The HCPP underwent a thermal-initiated curing reaction both with and without catalyst. Oxygen was essential to this curing reaction, and the film preparation process was very simple. The curing reaction of HCPP was monitored by differential scanning calorimeter (DSC) and Fourier transform infrared (FTIR) methods. The catalyst (cobalt naphthenate) could remarkably improve the curing reaction speed. The cardanol-based cured films show excellent thermal stabilities. Interestingly, the char yield of the film cured at 800 °C in nitrogen is above 29%, implying that the fire-retardancy of cardanol-based polymers can be notably increased by in traducing a hard phosphazene core into the structure. Meanwhile, all cured films are highly transparent and have T g values above 50 °C.

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This paper presents magnetic properties of highly ordered ultrathin FeRh films deposited on Si/SiO wafers with MgO as a buffer layer. The antiferromagnetic to ferromagnetic (FM) transition is observed with a thickness as low as 3 nm. However, as the thickness decreases, the residual magnetization (M rs ) at low temperature increases and the amplitude of the transition decreases. In addition, the transition becomes much broader for the thinner films. This broadening is related to the grain size reduction in the thinner films. The temperature dependence of the magnetization of a highly ordered B2 FeRh film with a thickness of 10 nm was carefully measured as a function of field. The results show that the transition temperature decreases almost linearly with a rate of 0.93 K/kOe (heating) and 0.97 K/kOe (cooling) close to the value for the bulk samples, while M rs obtained at 100 K increases rapidly at low field and then linearly at a field larger than 10 kOe, which clearly demonstrates that an applied field would induce FM stabilization in ultrathin FeRh films. 3 For these applications, FeRh film is used to reduce the switching field of the storage layer through the exchange coupling between the ferromagnetic (FM) FeRh layer and the storage layer at elevated temperatures without sacrificing the thermal stability of the storage layer at ambient temperature, since the antiferromagnetic (AF) FeRh layer provides negligible exchange coupling to the storage layer. The major challenge is to prepare ultrathin FeRh films with a single AF phase at ambient temperature, which will convert to the FM phase at elevated temperatures, and vice versa. So far, a sharp AF-FM transition of FeRh film was only reported at a thickness above 14 nm. 4 For ultrathin films with a thickness of 10 nm or below, a large residual magnetization (M rs ) is generally observed. 5 The origin of this low temperature FM phase remains unclear. Fan et al.6 observed the existence of a FM phase in a region within 6-8 nm near the top and bottom interfaces of a FeRh film. Based on ab initio calculations, Lounis et al.7 found that a FM state is stable up to 9 atomic layers for Rh-terminated FeRh films. In addition, the AF structure would become unstable when the amount of the site-exchange defect density exceeds a threshold of 0.8%/f.u. 8 Furthermore, based on the phase diagram, 9 the AF to FM transition can be only achieved in the a 00 phase which is formed within a narrow Fe atomic concentration range from 45% to 51%. Due to slow diffusion rate of Rh, it is likely that a mixture of the FM Ferich a 0 phase and the paramagnetic Rh-rich c phase is formed in the film. In this paper, the magnetic stability of ultrathin (10 nm) FeRh films is examined. It is found that for such ultrathin FeRh films, the low temperature FM stabilization is sensitive to the film thickness and the applied magnetic field. An AF to FM transition is observed at a thickness as low as 3 nm, which is close to the FM stabilization thickness based on ab initio calculations for Rh-terminated fi...