Silicon (Si) Gate-All-Around (GAA) MOSFETs offers full electrostatic control over the gate which makes them promising candidates for the next generation complimentary metal-oxide-semiconductor field-effect transistors (CMOS) devices. Due to variations in the growth condition, the cross-section of GAA MOSFETs is often elliptical instead of being perfectly circular. This elliptical cross section changes the effective diameter of the silicon core which in turn affects the electrical properties of the device. In this paper we analyze the impact of elliptical cross-section of multi-channel Si GAA MOSFET on some electrical properties such as threshold voltage, drain current, and so on. The dependence of such properties on doping concentration, thickness of the oxide (insulator), channel dimension and number of conducting channels are also presented.
This paper aims to explore the effects of imposition of online classes, teaching practices and conduct of examinations on students and faculty alike. The methodologies presented here are the actual practices followed by the faculties while delivering online classes, remote content preparation and distribution, exam guidelines and its implementation during the exams. This paper also explores the exam experience and overall satisfaction from student perspective. Survey was conducted among students in an anonymous way without collecting their identity to gauge their opinion on the way the online classes and exams were conducted. The sample of the study consisted of nearly 142 undergraduate students studying across three engineering colleges. This study finds interesting and mixed conclusions from students. We discuss in brief the challenges faced and how it was overcome by the faculty members and students alike, especially while conducting online examination. Some suggestions have also been made to improve upon not only the online teaching learning processes but also when the pandemic situation normalizes and physical classes would again become the norm. Keywords— Online classes; online teaching; active learning; COVID-19; student survey; student perception.
Rigorous mathematical formulation of digital circuits, although accurate, consumes simulation time of a circuit designer who wishes to have a quick investigation of the effect of various device parameters on the electrical response of a circuit. This paper uses simple yet efficient method to calculate the average resistance of the transistors for finding the RC time constant and thereby the transient analysis of CMOS inverter circuits. This method minimizes the computation time and reproduces the reported results. We have investigated the effect of variation of different device parameters such as width, oxide thickness, length etc. on the transient analysis of inverters. Computations were carried out for strained/unstrained planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and cylindrical gate-all-around (GAA) based CMOS inverters. Voltage-transfer characteristics (VTC) have also been plotted. Quantum effects have been incorporated for gate-all-around (GAA) MOSFETs based inverters.
Gate-all-around (GAA) metal-oxide-semiconductor field-effect transistors (MOSFETs) are high priority research topics of the present day. The ability to increase the drive current through a multi-channel (MC) architecture is a unique feature in GAA devices. Limitations in the fabrication process may result in non-circular cross-section of GAA MOSFETs. The most practical approach is the elliptical cross-section which is characterized by a geometry aspect ratio (AR) defined as the ratio of major and minor axes. In this paper, we have investigated the effects of AR and MC architectures on the noise margins (NMs) (high and low) of MC GAA MOSFET based CMOS inverters. We have developed a simulator which can faithfully plot the voltagetransfer characteristics (VTC) of such circuits. Analytical equations have been presented to model the NMs. To judge the reliability of our model, we have validated the same with reported experimental data and the average deviation obtained was within 1.2% (NM H ) to 5.1% (NM L ). Our analysis has also been extended to explore the possibilities of enhancing the circuit performance by using high-k materials.
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