On the Voltage Transfer Characteristics (VTC) of some Nanoscale Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs)

Saha, Jhuma; Kumari, Amrita; Jha, Shankaranand; Kumar, Somesh

doi:10.1007/978-3-319-03002-9_52

Cited by 3 publications

(1 citation statement)

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“…MATLAB code based simulator developed by our group [16] has been used to plot the voltage-transfer characteristics (VTC). We have also checked the accuracy of our results with the reported data [17].…”

Section: Introductionmentioning

confidence: 99%

Effect of Some Device Parameters on the Transient Characteristics of Nanoscale CMOS Inverters

Nandi

Jha

Kumari

2014

2014 International Conference on Devices, Circuits and Communications (ICDCCom)

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Rigorous mathematical formulation of digital circuits, although accurate, consumes simulation time of a circuit designer who wishes to have a quick investigation of the effect of various device parameters on the electrical response of a circuit. This paper uses simple yet efficient method to calculate the average resistance of the transistors for finding the RC time constant and thereby the transient analysis of CMOS inverter circuits. This method minimizes the computation time and reproduces the reported results. We have investigated the effect of variation of different device parameters such as width, oxide thickness, length etc. on the transient analysis of inverters. Computations were carried out for strained/unstrained planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and cylindrical gate-all-around (GAA) based CMOS inverters. Voltage-transfer characteristics (VTC) have also been plotted. Quantum effects have been incorporated for gate-all-around (GAA) MOSFETs based inverters.

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Section: Introductionmentioning

confidence: 99%