Silicon (Si) Gate-All-Around (GAA) MOSFETs offers full electrostatic control over the gate which makes them promising candidates for the next generation complimentary metal-oxide-semiconductor field-effect transistors (CMOS) devices. Due to variations in the growth condition, the cross-section of GAA MOSFETs is often elliptical instead of being perfectly circular. This elliptical cross section changes the effective diameter of the silicon core which in turn affects the electrical properties of the device. In this paper we analyze the impact of elliptical cross-section of multi-channel Si GAA MOSFET on some electrical properties such as threshold voltage, drain current, and so on. The dependence of such properties on doping concentration, thickness of the oxide (insulator), channel dimension and number of conducting channels are also presented.
Scaling of bulk MOSFETs in nanometre regime has several disadvantages. The electrical behaviour of the devices doesn’t show the anticipated characteristics if scaling is done beyond certain point. But in order to have smaller devices with higher density on chips, it is necessary to avoid short channel effects (SCE) which lead to unexpected electrical features. One of the methods to avoid SCE is to have multi-gate architecture of MOSFET. This paper investigates the behaviour of double-gate MOSFETs with respect to the variation of their physical dimensions. The analyses have been done taking into notice the quantum mechanical effects due to dimensions in nanometre scale. The results obtained highlight how subthreshold and above threshold regions are impacted due to the various physical quantities that have been varied.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.