A comparative analysis of the short-channel effects of double-gate, tri-gate and gate-all-around MOSFETs

Jha, Shankaranand; Choudhary, Santosh Kumar

doi:10.1504/ijnp.2020.106002

Cited by 4 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[1][2][3] However, as the channel length gradually decreases, the short channel effect becomes more serious, which degrades the performance of the device substantially. 4,5) Two-dimensional (2D) semiconductors like transition metal dichalcogenides (TMDCs) are considered to replace silicon and be a promising channel material because of their adjustable band gap of about 1-2 eV and the absence of short channel effect due to their atomic thickness. [6][7][8][9][10][11] To date, research on 2D semiconductor logic devices has made significant progress, such as CVD growth, [12][13][14][15] contact engineering, [16][17][18] and high-k dielectric growth on 2D surfaces.…”

Section: Introductionmentioning

confidence: 99%

Realization of MoTe₂ CMOS inverter by contact doping and channel encapsulation

Xie,

Ke,

Ueno

et al. 2024

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The Fermi level pinning (FLP) effect significantly limits the application of electrical devices based on two-dimensional (2D) materials like transition metal dichalcogenide (TMDC). Here, a complementary metal–oxide–semiconductor (CMOS) inverter, which is comprised of an n- and a p-MoTe2 FET with optimized properties, has been successfully fabricated by using contact doping and channel encapsulation methods. Contact doping is to control the polarity of MoTe2-FET and improve contact properties, which is achieved by laser irradiation in different environmental conditions. The channel of two MoTe2-FETs was encapsulated by hexagonal boron nitride (h-BN) to enhance carrier mobility and device stability. The fabricated CMOS inverter showed a very high gain value of 31 at V dd = 4 V at room temperature.

show abstract