Realization of MoTe₂ CMOS inverter by contact doping and channel encapsulation

Abstract

The Fermi level pinning (FLP) effect significantly limits the application of electrical devices based on two-dimensional (2D) materials like transition metal dichalcogenide (TMDC). Here, a complementary metal–oxide–semiconductor (CMOS) inverter, which is comprised of an n- and a p-MoTe2 FET with optimized properties, has been successfully fabricated by using contact doping and channel encapsulation methods. Contact doping is to control the polarity of MoTe2-FET and improve contact properties, which is achieved by laser irradiation in different environmental conditions. The channel of two MoTe2-FETs was encapsulated by hexagonal boron nitride (h-BN) to enhance carrier mobility and device stability. The fabricated CMOS inverter showed a very high gain value of 31 at V dd = 4 V at room temperature.