Impact of Elliptical Cross-Section on Some Electrical Properties of Gate-All-Around MOSFETs

Abstract

Silicon (Si) Gate-All-Around (GAA) MOSFETs offers full electrostatic control over the gate which makes them promising candidates for the next generation complimentary metal-oxide-semiconductor field-effect transistors (CMOS) devices. Due to variations in the growth condition, the cross-section of GAA MOSFETs is often elliptical instead of being perfectly circular. This elliptical cross section changes the effective diameter of the silicon core which in turn affects the electrical properties of the device. In this paper we analyze the impact of elliptical cross-section of multi-channel Si GAA MOSFET on some electrical properties such as threshold voltage, drain current, and so on. The dependence of such properties on doping concentration, thickness of the oxide (insulator), channel dimension and number of conducting channels are also presented.

Characteristic Fluctuations of Dynamic Power Delay Induced by Random Nanosized Titanium Nitride Grains and the Aspect Ratio Effect of Gate-All-Around Nanowire CMOS Devices and Circuits

“…Due to this, perfectly round-shaped channel GAA NW MOSFET devices are difficult to manufacture. The different aspect ratio (AR) of channel radius results in a different shape of channel cross-section—an elliptical shape instead of the ideal round shape [23,24,25]. Therefore, we will discuss the electrical characteristics of the explored devices with different ARs.…”