Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Walls interaction. To do this, we carried out a correlative far- and near-field characterization validated by first-principle calculations that reveals an unprecedented birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this outstanding anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics.

Atomically thin transition metal dichalcogenides (TMDCs) present a promising platform for numerous photonic applications due to excitonic spectral features, possibility to tune their constants by external gating, doping, or light, and mechanical stability. Utilization of such materials for sensing or optical modulation purposes would require a clever optical design, as by itself the 2D materials can offer only a small optical phase delay – consequence of the atomic thickness. To address this issue, we combine films of 2D semiconductors which exhibit excitonic lines with the Fabry-Perot resonators of the standard commercial SiO2/Si substrate, in order to realize topological phase singularities in reflection. Around these singularities, reflection spectra demonstrate rapid phase changes while the structure behaves as a perfect absorber. Furthermore, we demonstrate that such topological phase singularities are ubiquitous for the entire class of atomically thin TMDCs and other high-refractive-index materials, making it a powerful tool for phase engineering in flat optics. As a practical demonstration, we employ PdSe2 topological phase singularities for a refractive index sensor and demonstrate its superior phase sensitivity compared to typical surface plasmon resonance sensors.

Halloysite nanotubes (HNTs) with immobilized gold (Au) and silver (Ag) nanoparticles (NPs) belong to a class of nanocomposite materials whose physical properties and applications depend on the geometry of arrangements of the plasmonic nanoparticles on HNT’ surfaces. We explore HNTs:(Au, Ag)-NPs as potential nano-templates for surface-enhanced Raman scattering (SERS). The structure and plasmonic properties of nanocomposites based on HNTs and Au- and Ag-NPs are studied by means of the transmission electron microscopy and optical spectroscopy. The optical extinction spectra of aqueous suspensions of HNTs:(Au, Ag)-NPs and spatial distributions of the electric fields are simulated, and the simulation results demonstrate the corresponding localized plasmonic resonances and numerous “hot spots” of the electric field nearby those NPs. In vitro experiments reveal an enhancement of the protein SERS in fibroblast cells with added HNTs:Ag-NPs. The observed optical properties and SERS activity of the nanocomposites based on HNTs and plasmonic NPs are promising for their applications in biosensorics and biophotonics.

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The data that support the findings of this study are available in the Supporting Information of this article.

Regular fluctuations in the height of phase profile of isolated neuron were studied by laser interference microscopy. The resultant spectra of frequencies of changes in the phase profile height indicate regular local changes in the optical density and/or geometry of neurons. The frequency spectra for the central and pri-membrane regions of the cells are different.

Paramount problems of the development of the assessment of population health risks associated with the chemical exposure in Russia are considered on the ground of critical analysis of reports devoted to methodological issues of the risk assessment and guidelines published since 2010. Causes of the lack in progress of risk assessment are discussed. The information of executed research revealed the significant retardation number of Russian publications devoted to the evidence-based health risk assessment compare to worldwide trend. The analysis of publications according to evidence-based health risk assessment in Russia in 1998 - 2012 demonstrated methodical problems to be leading to the underestimation of the real risk to population’s health. There are demonstrated directions in the renewal of methodology and practice of hygienic standardization on the basis of the risk assessment. The comparative analysis of values of uncertainty factors (modifying factors, conversion factors) used for extrapolation and accepted in different countries and organizations was made. The system of extrapolation coefficients of DNEL (Derive No-Effect Level) is presented. The leading principles of modern toxicology and risk assessment based on strict scientific proofs are showed. Criteria of evidence-based toxicology and risk assessment are presented.Among actual problems which demand their decision there are considered: the assessment of combined action in regulatory toxicology; expansion of spheres of the application of health risk assessment methodology; the improvement ofpreparation and certification of experts in the field of health risk assessment; need of check of dispersion models and their replacement by more modern models; the improvement of exposure assessment with taking into account the international requirements; the assessment of regional exposure factors; expansion of atmospheric air monitoring in all the large cities of Russia

Ultrathin and ultrasmooth Au films are realized on 2D MoS2 adhesion layers. These films demonstrate excellent electrical conductivity and Drude plasmonic response at thicknesses down to 3 nm, providing a promising platform for flexible and transparent electronics as well as for van der Waals heterostructures with atomically thin metal layers. Further details can be found in article number 1900196 by Dmitry I. Yakubovsky, Valentyn S. Volkov, and co‐workers.