Double-heterostructure GaAs–Alx Ga1−x As injection lasers which operate continuously at heat-sink temperatures as high as 311°K have been fabricated by liquid-phase epitaxy. Thresh-olds for square diodes as low as 100 A/cm2 and for Fabry-Perot diodes as low as 1600 A/cm2 have been obtained. Some details of preparation and properties are given.
Double-heterostructure AlxGa1−xAs–GaAs– AlxGa1−xAs injection lasers with room-temperature thresholds as low as 2300 A/cm2 have been prepared by solution epitaxy. These lasers have high gain and a low temperature coefficient of the threshold up to the highest temperatures measured, 380 °K.
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