Ga-Al-As: Phase, thermodynamic and optical properties

Panish, M. B.; Sumski, S.

doi:10.1016/0022-3697(69)90345-x

Cited by 92 publications

(18 citation statements)

References 14 publications

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“…This system has been described in some detail already,2 and the phase information which pen;nits selection of the liquid composition to yield a gIven solidus at a particular temperature is reported elsewhere. 16 For this work most of the layer growth was started at 1000°C with a liquid composition chosen to yield approximately Gao.6Al0.5As..…”

Section: A Waier Fabricationmentioning

confidence: 99%

GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room Temperature

Hayashi¹,

Panish²

1970

Journal of Applied Physics

129

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The electrical and optical properties of GaAs–GaxAl1−xAs injection lasers produced by solution epitaxy are described. These lasers are composed of three layers, n-GaAs, a thin p-GaAs layer, and a p-GaxAl1−xAs layer. In these lasers, the threshold current Jth is a strong function of the width of the p-GaAs layer d, being optimum where d is about 2 μ. The temperature dependence of Jth is comparatively small below some maximum temperature TM, above which it increases very rapidly. The values of Jth obtained near room temperature for these lasers are lower than have previously been reported for injection lasers. Fabry-Perot-type diodes with cavities of about 400 μ may be reproducibly prepared with Jth (300°K) about 10 000 A/cm2. The lowest Jth (300°K) observed for one of these units was 8600 A/cm2. Units with fully internally reflected modes can be reproducibly prepared with Jth (300°K) ≈6000–7000 A/cm2. The low Jth (300°K) of these lasers is attributed primarily to carrier confinement, although improved optical confinement and reduced absorption losses may also play a role. The behavior of Jth at TM and the minimum in Jth as a function d are attributed to hole injection.

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Section: A Waier Fabricationmentioning

confidence: 99%

GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room Temperature

Hayashi¹,

Panish²

1970

Journal of Applied Physics

129

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“…The second point of uncertainty arises from the fact that the alloys were deposited either at different temperatures or the energy band gap transitions were measured at different temperatures (2 or 300 K). A third point of the experimental procedure that affects the results is the technique used for measurements, such as optical absorption [8,9], diode emission [10,11] photoresponse [12], electroreflectance (ER) [13], photoluminescence (PL) [1,2,5,6] and spectroscopic ellipsometry (SE) [14,15,7].…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study of Band Structure of AlxGa1?xAs by Means of the Recursion Method

Vinga

1998

phys. stat. sol. (b)

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The Haydock recursion method is used to study the electronic structure of the alloy semiconductor Al x Ga 1± ±x As. We calculated the energy band gap (direct and indirect) of this material as a function of aluminium concentration for three critical symmetry points (G, X, L) and the crossover of the G (direct) and X (indirect) band gap determined at x c = 0.5 with E c = 2.1 eV. We also calculated the spectral density of states for the top valence and bottom conduction bands and the effect of the off-diagonal disorder parameters on the density of states was studied. Finally, we examined the broadening of the alloy at the G symmetry point. All results are discussed and compared with the reported experimental ones and are in satisfactory agreement for the entire concentration range.

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“…Here 1000 and 1100° C liquidus isotherms are shown with tielines for the 1000° C line as derived from ref. 47. The first two 1000° C tielines to the right and two 1100° C (dot-dash) tielines are the writer's concept by way of interpretation.…”

mentioning

confidence: 97%

“…3.18. Section of Al-Ga-As phase diagram as derived from reference (47). Here 1000 and 1100° C liquidus isotherms are shown with tielines for the 1000° C line as derived from ref.…”

mentioning

confidence: 99%