Ga–As–Si: Phase Studies and Electrical Properties of Solution-Grown Si-Doped GaAs

Panish, M. B.; Sumski, S.

doi:10.1063/1.1659398

Cited by 23 publications

(9 citation statements)

References 7 publications

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“…In addition, there is one invariant three-surface in the subsystem Ga-GaAs-Si has also been studied[24,25] with similar results. The polythermal projection O f the liquidus surface(Fig.…”

supporting

confidence: 61%

“…Using the DTA data of Panish and Sumski [23,24], a calculation of liquidus isotherms and thermodynamic activities was presented by Jordan and Weiner [26], based on the assumption of a ternary regular solution.…”

Section: Ga-as-simentioning

confidence: 99%

“…The polythermal projection O f the liquidus surface(Fig. 5) combines the modified data[23][24][25] and the newSi (at*/.) Liquidus surface of the ternary Ga-As-Si system.…”

mentioning

confidence: 99%

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Phase equilibria in ternary Ga-As-M systems (M = W, Re, Si)

Han

Schmid–Fetzer

1993

J Mater Sci: Mater Electron

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The ternary phase diagrams for Ga-As-W, Ga-As-Re and Ga-As-Si have been investigated with powder samples annealed in silica capsules and analysed by X-ray diffraction. All three isothermal sections at 800°C are dominated by a two-phase GaAs-M equilibrium (M =W, Re, Si). Additional literature data on the Ga-As-Si system are critically evaluated and the invariant reactions and the liquidus surface are developed, The binary Re-Ga edge system was studied with additional DTA and SEM-EDX experiments and a new compound ReGa~ was detected which forms in a peritectic reaction at 764°C

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“…In addition, there is one invariant three-surface in the subsystem Ga-GaAs-Si has also been studied[24,25] with similar results. The polythermal projection O f the liquidus surface(Fig.…”

supporting

confidence: 61%

Section: Ga-as-simentioning

confidence: 99%

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Phase equilibria in ternary Ga-As-M systems (M = W, Re, Si)

Han

Schmid–Fetzer

1993

J Mater Sci: Mater Electron

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“…The pivoted furnace tube and boat could be tipped like a see-saw, in order to roll the melt on and off the GaAs wafer, and during contact of the melt and substrate, the furnace temperature is lowered to effect epitaxial growth. Panish and Sumski [35,36] and Nelson [37] developed a more sophisticated slideboat apparatus that facilitated the growth of multilayer structures. Unlike the alloying method, this processes added new material to the substrate including epitaxial layers of material different than the substrate, e.g., AlGaAs.…”

Section: Historical Perspectivementioning

confidence: 99%

Liquid-Phase Epitaxy

Mauk

2015

Handbook of Crystal Growth

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“…In the calculations, the multidimensional linear least square computational technique of Businger and Golub ( 18) is applied via Eq. [1] to the 18 ternary liquidus points of Panish (19) 2 and Panish and Sumski (20) for the primary phase field of Si-doped GaAs and to the 14 binary liquidus points of Koster and Thoma (21) and Hall (22) for the Ga-As system. The i.c.e.…”

Section: Calculation Of the Interchange Energiesmentioning

confidence: 99%

Calculation of the Liquidus Isotherms and Component Activities in the Ga-As-Si and Ga-P-Si Ternary Systems

Jordan¹,

Weiner²

1974

J. Electrochem. Soc.

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Liquidus isotherms and thermodynamic activities have been calculated for the Ga-As-Si and Ga-P-Si ternary systems. The calculations are based on the assumption that the activities of the components in the liquid phase can be represented with sufficient accuracy by the ternary regular solution model. A least square analysis of the liquidus data for Si-doped GaAs yields the three ternary interchange energies (i.c.e.'s). These are then used to construct the liquidus isotherms for Si-doped GaAs, Ga-and As-doped Si, and the ternary eutectic valley, all of which are in excellent agreement with the experimental results over a wide temperature and composition range. The ternary Ga-As and Ga-Si i.c.e.'s are in very good accord with the i.c.e.'s derived from the binary data but a similar test for the Si-As i.c.e, shows a less satisfactory agreement. As the Ga-P-Si system has not yet been investigated, the calculations presented here are based solely on binary data and they need experimental confirmation. The implications of these results to crystal growth and the limitations of the regular solution model in the vicinity of the compound composition SiAs are also discussed.

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Ga–As–Si: Phase Studies and Electrical Properties of Solution-Grown Si-Doped GaAs

Cited by 23 publications

References 7 publications

Phase equilibria in ternary Ga-As-M systems (M = W, Re, Si)

Phase equilibria in ternary Ga-As-M systems (M = W, Re, Si)

Liquid-Phase Epitaxy

Calculation of the Liquidus Isotherms and Component Activities in the Ga-As-Si and Ga-P-Si Ternary Systems

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