Liquid-Phase Epitaxy

Mauk, Michael G.

doi:10.1016/b978-0-444-63304-0.00006-8

Cited by 6 publications

(2 citation statements)

References 504 publications

(414 reference statements)

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“…Solid phase epitaxy has not been widely reported for III-V materials [32]. Liquid phase epitaxy or LPE had been widely used for the creation of thick single layers and important in the early development of heterojunctions [33]. LPE has typically worked with a single wafer of limited area.…”

Section: Epitaxial Growthmentioning

confidence: 99%

III-V compound semiconductors: Growth and structures

Kuech

2016

Progress in Crystal Growth and Characterization of Materials

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Section: Epitaxial Growthmentioning

confidence: 99%

III-V compound semiconductors: Growth and structures

Kuech

2016

Progress in Crystal Growth and Characterization of Materials

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“…Liquid metals were essential to the discovery and synthesis of many historically important crystalline inorganic materials. At the onset of the semiconductor age, high-temperature liquid metals were crucial in both the fundamental understanding of crystal growth and the practical production of high-quality materials for optoelectronic devices . Interest in liquid metals as platforms for materials science continues to this day. − A vibrant new direction focuses on metals and metal alloys that are molten at or near room temperature .…”

Section: Background and Contextmentioning

confidence: 99%

Understanding and Expanding the Prospects for Electrosynthesis with Liquid Metal Electrodes

Hazelnis

Maldonado

2023

Acc. Chem. Res.

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Metrics & MoreArticle Recommendations CONSPECTUS: This Account describes and summarizes the latest work from our laboratory on developing and maturing strategies based on low-temperature liquid metals as reaction environments for materials synthesis. The electrochemical liquid−liquid−solid (ec-LLS) crystal growth concept is a hybrid method that combines electrodeposition and melt crystal growth. Using liquid metals as both electrodes and solvents for the purpose of producing inorganic crystals and materials, a simple and environmentally friendly process is possible. The impetus is to address the key deficiency in the inorganic crystalline materials that are the basis of modern optoelectronics and renewable energy capture/conversion systems. Specifically, existing methods for synthesizing crystalline inorganic materials for these purposes are largely energy-and resource-intensive, with a substantial impact on the environment when scaled. A long-term goal of our work with ec-LLS is to realize a materials synthetic process that is matured without requiring intensive resources or negatively impacting the environment. To this end, the factors that both limit and govern ec-LLS processes must be identified and understood. To date, questions regarding the factors that affect crystal nucleation and growth, form factors, and overall composition remain.Previous work established concretely ec-LLS as a versatile method for synthesizing and producing crystalline semiconductors at low temperatures as either particles, nanowires, or microwires. Subsequent experiments have focused on two tiers. First, the microscopic details of the liquid metal and its interfaces that dictate materials synthesis and crystal growth must be identified. Second, strategies that widen the attainable material form factors to facilitate device architectures must be realized. Hence, this Account describes results aimed at answering three questions: (1) What are the consequences of reaching supersaturation by an electrochemical rather than a thermal driving force for crystal growth in ec-LLS? (2) Can the location of nucleation and subsequent crystal growth be controlled? (3) Does the atomic structure of the liquid metal affect product formation in ec-LLS? The science described herein illustrates the value of in situ methods spanning transmission electron microscopy, X-ray diffraction, and X-ray reflectance for revealing the role that liquid metal composition and structure can play in ec-LLS. Additionally, we summarize work that shows for the first time that it is possible to produce both single-crystalline epitaxial films and complex intermetallic compounds through ec-LLS by tuning the cell design, electrochemical excitation waveform, and composition of the liquid metal electrodes.The cumulative findings described here substantially enrich our understanding of the ec-LLS concept while simultaneously motivating further questions moving forward. Is it possible to attain complete control over the crystalline quality and composition of ec-LLS products? Can th...

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Liquid‐Phase Epitaxy

Mauk¹

2023

Digital Encyclopedia of Applied Physics

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Liquid‐phase epitaxy (LPE) is a crystal growth method that produces single‐crystal films or layers of semiconductors and other types of materials on a supporting substrate. LPE‐grown structures include light‐emitting diodes (LEDs), laser diodes, and photodetectors; energy conversion devices such as photovoltaic cells, and various magnetic and optical devices. LPE is typically affected by solidifying a film comprising solute components precipitated from a molten metallic solution at temperatures ranging from several hundred to >1200 °C. A common LPE technology is based on a crucible slider apparatus in a temperature‐programmed furnace with a hydrogen ambient at atmospheric pressure. Multiple layer depositions generate a wide range of structures, and LPE has proven especially useful for III–V compound semiconductor heterostructures. Present‐day uses of LPE stem from favorable features such as fast growth rates, low defect densities, a wide choice of impurity dopants, and straightforward formulations based on phase equilibria and kinetics data and models. While LPE was a prominent epitaxy technology in the 1970s and 1980s, nowadays LPE is relegated to niche applications. Compared to competing epitaxy technologies such as molecular beam epitaxy (MBE) and metal–organic chemical vapor deposition (MOCVD), LPE falls short with regard to the achievement of ultrathin layered structures, strained or lattice‐mismatched structures, abrupt interfaces, and areal uniformity. Still, there are significant application areas well served by LPE or by modified LPE techniques, as reviewed here.

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Liquid-Phase Epitaxy

Cited by 6 publications

References 504 publications

III-V compound semiconductors: Growth and structures

III-V compound semiconductors: Growth and structures

Understanding and Expanding the Prospects for Electrosynthesis with Liquid Metal Electrodes

Liquid‐Phase Epitaxy

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