DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2

Panish, M. B.; Hayashi, I.; Sumski, S.

doi:10.1063/1.1653213

Cited by 144 publications

(19 citation statements)

References 10 publications

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“…III.F). Hwang's calculations 22 suggest that in the relation (5) m will decrease with increasing compensation in the active region. This is consistent with our observation which shows approximately go:.]2.…”

Section: (4)mentioning

confidence: 95%

GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

Hayashi¹,

Panish²,

Reinhart³

1971

Journal of Applied Physics

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192

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Double heterostructure GaAs–AlxGa1−xAs junction lasers which have very low thresholds and which have been operated continuously at and above room temperature have been fabricated by liquid phase epitaxial growth. The threshold current density of these lasers decreases approximately linearly with the thickness of the active region from 3 to at least 0.5 μm. This is interpreted as the result of near perfect carrier and optical confinement as the result of large steps in the energy gap and index of refraction at the heterojunctions in these diodes. The gain in these lasers is very high and its dependence upon current density is superlinear. Loss is very low and almost that expected from free carriers. Complete polarization of the lasing mode was observed. This latter is interpreted to be the result of an increased reflection coefficient for the T E mode.

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Section: (4)mentioning

confidence: 95%

GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

Hayashi¹,

Panish²,

Reinhart³

1971

Journal of Applied Physics

Self Cite

192

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“…In working towards the development of single crystal CuCl on Si, we have recently constructed a Liquid Phase Epitaxy (LPE) system based on the sliding boat mechanism [6]. The LPE technique is used widely for the growth of high quality crystalline layers, for which it is ideally suited, owing to its near-equilibrium nature.…”

mentioning

confidence: 99%

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

Cowley

Foy

Danilieuk

et al. 2009

Physica Status Solidi (a)

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Considerable research is being carried out in the area of wide band gap semiconductor materials for light emission in the 300–400 nm spectral range. Current materials being used for such devices are typically based on II–VI and III‐nitride compounds and variants thereof. However, one of the major obstacles to the successful fabrication of III‐N devices is lattice mismatch‐induced high dislocation densities for epitaxially grown layers on non‐native substrates. γ‐CuCl is a direct bandgap material and an ionic wide bandgap I–VII semiconductor with a room temperature free exciton binding energy of ∼190 meV (compared to ∼25 meV and ∼60 meV for GaN and ZnO, respectively) and has a band gap of 3.4 eV (λ ∼ 366 nm). The lattice constant of γ‐CuCl (0.541 nm) is closely matched to that of Si (0.543 nm). This could, in principle, lead to the development of optoelectronic systems based on CuCl grown on Si. Research towards this end has successfully yielded polycrystalline γ‐CuCl on Si(100) and Si(111) using vacuum‐based deposition techniques [1]. We report on developments towards achieving single crystal growth of CuCl from solution via Liquid Phase Epitaxy (LPE) based techniques. Work is being carried out using alkali halide flux compounds to depress the liquidus temperature of the CuCl below its solid phase wurtzite‐zincblende transition temperature (407 °C [2]) for solution based epitaxy on Si substrates. Initial results show that the resulting KCl flux‐driven deposition of CuCl onto the Si substrate has yielded superior photoluminescence (PL) and X‐ray excited optical luminescence (XEOL) behavior relative to comparitively observed spectra for GaN or polycrystalline CuCl. This enhancement is believed to be caused by an interaction between the KCl and CuCl material subsequent to the deposition process, perhaps involving a reduction in Cl vacancy distributions in CuCl. This paper presents a detailed discussion of a CuCl LPE growth system as well as the characterization of deposited materials using X‐ray diffraction (XRD), room temperature and low temperature PL, and XEOL. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The wider bandgap cladding layer on either side of the active layer also reduces optical losses due to parasitic absorption of the photons outside the active region. The carrier and optical confinement in double heterostructures enabled room-temperature continuous lasing demonstration (36,37). Kroemer and Alferov shared 2000 Nobel Prize in Physics for theoretical development and first experimental demonstration, respectively, of double heterostructure lasers (35,38).…”

Section: History and Device Conceptsmentioning

confidence: 99%

III‐VCompound Semiconductor Optoelectronic Devices

Mokkapati

Jagadish

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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DOUBLE-HETEROSTRUCTURE INJECTION LASERS WITH ROOM-TEMPERATURE THRESHOLDS AS LOW AS 2300 A/cm2

Cited by 144 publications

References 10 publications

GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

UV emission on a Si substrate: Optical and structural properties of γ‐CuCl on Si grown using liquid phase epitaxy techniques

III‐VCompound Semiconductor Optoelectronic Devices

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