Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers

Panish, M. B.; Sumski, S.; Hayashi, I.

doi:10.1007/bf02662738

Cited by 88 publications

(8 citation statements)

References 14 publications

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“…Further information concerning the concentrations of the dopants and Al is given in Ref. 23. Detailed studies of dopant concentrations actually achieved in the various layers have not been done; however, photoluminescence measurements on GaAs layers grown with comparable amounts of Si yield data consistent with heavily compensated material.…”

Section: Fabrication and Preliminary Evaluation Of The Laser Strumentioning

confidence: 82%

GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

Hayashi¹,

Panish²,

Reinhart³

1971

Journal of Applied Physics

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192

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Double heterostructure GaAs–AlxGa1−xAs junction lasers which have very low thresholds and which have been operated continuously at and above room temperature have been fabricated by liquid phase epitaxial growth. The threshold current density of these lasers decreases approximately linearly with the thickness of the active region from 3 to at least 0.5 μm. This is interpreted as the result of near perfect carrier and optical confinement as the result of large steps in the energy gap and index of refraction at the heterojunctions in these diodes. The gain in these lasers is very high and its dependence upon current density is superlinear. Loss is very low and almost that expected from free carriers. Complete polarization of the lasing mode was observed. This latter is interpreted to be the result of an increased reflection coefficient for the T E mode.

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Section: Fabrication and Preliminary Evaluation Of The Laser Strumentioning

confidence: 82%

GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

Hayashi¹,

Panish²,

Reinhart³

1971

Journal of Applied Physics

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192

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“…The wetting behavior of a III-V melt influences the carryover of melt, and by this the epitaxial quality with respect to unintentionally grown layers [e.g., (1)]. …”

mentioning

confidence: 99%

“…In liquid phase epitaxy (LPE) of a III-V compound semiconductor, a metallic melt is in contact with a solid substrate and a crucible, usually graphite. The wetting behavior of a III-V melt influences the carryover of melt, and by this the epitaxial quality with respect to unintentionally grown layers [e.g., (1)].…”

mentioning

confidence: 99%

Contact Angles Between III–V Melts and Several Substrates

Keck¹

1983

J. Electrochem. Soc.

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The wetting behavior of several melts with different III-V compound semiconductors is studied. The characteristic parameter measured is the contact angle of a melt drop with a solid. It is evaluated by a geometrical measurement of the melt drop. The importance of clean surfaces of drop and solid is shown. Contact angles between 20 ~ and 60 ~ are found, depending on the type and composition of the melt and substrate. The temperature dependence amounts to about -4 ~ per 100 K increase. In addition, the contact angle varies with the substrate orientation. The (100) orientated substrates are wetted better than (111) A orientated ones.In liquid phase epitaxy (LPE) of a III-V compound semiconductor, a metallic melt is in contact with a solid substrate and a crucible, usually graphite. The wetting behavior of a III-V melt influences the carryover of melt, and by this the epitaxial quality with respect to unintentionally grown layers [e.g., (1)].The quality of the wetting may also affect the crystalline perfection of an epitaxial layer along the melt meniscus due to surface tension (2). When removing the melt from the semiconductor, it moves by a "stickslip" motion. This forms the well-known meniscus lines (3).The representative parameter for wetting is the contact angle at the melt meniscus between the melt surface and the substrate surface covered by the melt [e.g., (4)]. The better the wetting, the smaller the contact angle is. The literature data for Ga on GaAs with contact angles >90 ~ from Munir and co-workers (5, 6), do not agree with the phenomenological experience of capillary ascension at LPE of III-V compounds. When melt and substrate are brought into contact, one usually observes a creeping of the melt on the substrate under the melt chamber walls. Very recently, Small and Potemsl~i (7) reported on smaller angles for GaAs and Ga0.4A10.~As, when regarding a microscopical deformation of the solid around the periphery of the drop. We have evaluated contact angles in a macroscopical measure of melt and solid to find representative data for LPE. Several III-V compound systems and different substrate orientations have been studied in a hydrogen atmosphere. ExperimentalWe have used a horizontal LPE apparatus, consisting of a movable heat pipe furnace, a quartz reaction tube, a Pd diffusion cell, and a crucible of high purity graphite with fixed melt chambers, and a sliding substrate holder. A side-wall of one melt chamber was omitted in order to directly observe the melt contact angles. During a 3 hr heat cleaning at 1145 K in purified hydrogen, the melt drop, of about 5 mm diam, lies on the graphite slider within the chamber of 24 • 24 nuns separated from the substrate. The substrate is protected by a graphite cover. The sliding mechanism allows us to roll the melt drop on the graphite slider so that its surface can be exposed to reducing hydrogen, even its incipient contact area. Only after the heat cleaning is the substrate rapidly moved under the melt drop. The drop spreads on the substrate surface without touch...

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“…Heterojunction is a junction made of two semiconductors having different forbidden energetic band. Usually, heterojunction devices are made of composed semiconductor materials, based on the elements of the periodic table, being found in the III and V groups [18][19][20][21][22][23][24]. This type of materials can be of ternary type, A x B 1-x C or quaternary, A x B 1-x C y D 1-y and (A x B 1-x ) y C 1-y D. Semiconductor materials used in microelectronics are the ones based on GaAs and InP.…”

Section: Wwwjosaromentioning

confidence: 99%

Transit Time Model Analysis Through the Basis in the Case of Drift Transistors HBT

Gabriel

2022

J. Sci. Arts

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The manufacturing technology for heterojunction bipolar transistor (HBT) is different from the one used for bipolar silicon junction transistor (BJT). The base in case of BJT is manufactured by using diffusion and the diffusion laws determine a Gaussian type of profile in the base. HBT devices are manufactured using molecular epitaxy which gives a contact doping profile. In case of HBT, producing an internal field by using uniform doping is no more possible. This is the reason why was used in the gradation of the molar composition. The Analysis using Octave soft was made for the transit time through the base of the drift HBT transistors type GaAs/AlxGa1-xAs.

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Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasers

Cited by 88 publications

References 14 publications

GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers

Contact Angles Between III–V Melts and Several Substrates

Transit Time Model Analysis Through the Basis in the Case of Drift Transistors HBT

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