Graphene
is promising as a transparent, flexible, and possibly
cost-effective substrate for nanowire-based devices. We have investigated
Au-seeded III–V nanowire growth with graphite as a model substrate.
The highest yield of undoped vertical nanowires was found for InAs,
but we also observed vertical nanowires for the InP, GaP, and GaAs
materials. The yield of vertical nanowires for GaP and GaAs was strongly
improved by supplying the p-dopant DEZn before nanowire growth but
not by supplying H2S or HCl. In-plane GaAs and GaP nanowire
growth exhibited an unexpected behavior, where the seed particles
seemingly reflected on the side facets of other nanowires. These results
pave the way for vertical and in-plane hybrid graphene- nanowire devices.