Junction Lasers Which Operate Continuously at Room Temperature

Abstract

Double-heterostructure GaAs–Alx Ga1−x As injection lasers which operate continuously at heat-sink temperatures as high as 311°K have been fabricated by liquid-phase epitaxy. Thresh-olds for square diodes as low as 100 A/cm2 and for Fabry-Perot diodes as low as 1600 A/cm2 have been obtained. Some details of preparation and properties are given.

The effect of growth ambient on the structural and optical properties of MgxZn1−xO thin films

“…However, the thermodynamic solubility limit of MgO in ZnO is only about 4% as suggested by the phase diagram of MgO-ZnO binary system [6]. There are a number of reports on the growth of Mg x Zn 1Àx O thin films using various techniques such as pulsed laser deposition (PLD) [7][8][9], laser ablation-molecular beam epitaxy (LA-MBE) [10], and radio frequency (rf) magnetron sputtering [11][12][13]. The substitution limit was found to be different for different techniques which are about 33% for PLD [14], 49% for molecular beam epitaxy (MBE) [15], and metalorganic vapor phase epitaxy (MOVPE) [16].…”

Structural and photoluminescence characters of SnO2:Sb films deposited by RF magnetron sputtering

“…To obtain the high performance of light emitting diodes (LED) devices, the key technique is to construct a heterojunction to realize double confinement actions for electrons and photons in optoelectronic devices. Modulation of the band gap while keeping the lattice constants similar to each other is essential for this purpose [12]. Because the ionic radius of Sb ions (0.740 Å for Sb 5+ and 0.90 Å for Sb 3+ [13]) is similar to that of Sn 4+ (0.83 Å ), a wide range solubility of Sb in the Sn blend could be obtained in the films.…”

Analysis and modeling of ridge waveguide quarterly wavelength shifted distributed feedback laser with three rate equations

“…Optical amplification in a semiconductor laser is similar to that in FP [6]. To reduce threshold current density in room temperature and modify semiconductor lasers' characteristics, single hetero (SH) structure was introduced in 1962 [7][8][9], and in late 1960s double-hetero (DH) structure was introduced to reduce threshold current down to 1 kA/cm 2 [10][11][12].…”