We have investigated the electrical and structural properties of Pt/Ti metallization scheme on n‐type InP as a function of annealing temperature using current–voltage (I–V), capacitance–voltage (C–V), Auger electron spectroscopy (AES), and X‐ray diffraction (XRD) measurements. Measurements showed that barrier height of as‐deposited Pt/Ti Schottky contact is 0.62 eV (I–V) and 0.76 eV (C–V). Experimental results indicate that high‐quality Schottky contact with barrier height and ideality factor of 0.66 eV (I–V), 0.80 eV (C–V), and 1.14 can be achieved after annealing at 400 °C for 1 min in N2 atmosphere. Further, it is observed that the barrier height slightly decreases to 0.55 eV (I–V) and 0.71 eV (C–V) after annealing at 500 °C. Norde method is also employed to calculate the barrier height of Pt/Ti Schottky contacts. The obtained values are in good agreement with those obtained by I–V measurements. These results indicate that the optimum annealing temperature for the Pt/Ti Schottky contact is 400 °C. According to AES and XRD analysis, the formation of indium phases at the Pt/Ti/n‐InP interface could be the reason for the increase of Schottky barrier height (SBH) after annealing at 400 °C. Results also showed the formation of phosphide phases at the interface. This may be the reason for the decrease in the barrier height after annealing at 500 °C. The AFM results showed that the overall surface morphology of Pt/Ti Schottky contact is reasonably smooth.
We report on the effect of annealing temperature on electrical, interfacial reactions and surface morphological properties of Ni/Cu Schottky contacts on n-type InP. The extracted barrier height of as-deposited Ni/Cu Schottky contact is 0.59 eV (I-V) respectively. The high-quality Schottky contact with barrier height and ideality factor of 0.65 eV (I-V) and 1.15 respectively, can be obtained after annealing at 300℃ for 1 min in a nitrogen atmosphere. However, annealing at 400℃, results the decrease in the barrier height to 0.54 eV (I-V). From the above observations, it is observed that Ni/Cu Schottky contact exhibited excellent electrical properties after annealing at 300℃. Hence, the optimum annealing temperature for the Ni/Cu Schottky contact is 300℃. Furthermore, Cheung’s functions is used to extract the diode parameters including ideality factor, barrier height and series resistance. According to the XRD analysis, the formation of the indium phases at the Ni/Cu/n-InP interface could be the reason for the increase in the barrier height at annealing temperature 300℃. Further, the degradation of the barrier heights after annealing at 400℃ may be due to the formation of phosphide phases at the Ni/Cu/n-InP interface. Scanning electron microscopy (SEM) results show that the overall surface morphology of the Ni/Cu Schottky contact is reasonably smooth
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.