Temperature Dependency And Current Transport Mechanisms Of Pd/V/n-type InP Schottky Rectifiers

Naik, S. Sankar; Reddy, V. Rajagopal

doi:10.5185/amlett.2012.1316

Cited by 38 publications

(4 citation statements)

References 2 publications

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“…[9][10][11] Therefore, analysis of the current voltage (I-V) characteristics of the Schottky diodes at room temperature does not give detailed information about their conduction process, the nature of barrier formation at the interface and interface states. [12][13][14][15][16][17] The temperature dependence of the I-V characteristics allows us to understand different aspects of conduction mechanisms and the calculation of interface states. [9][10][11][12][13][14][15] In low dimensional systems, the Schottky barrier height depends not only on the work functions of the metal but also on the pinning of the Fermi level by surface states, image force lowering, field penetration and the existence of an interfacial insulating layer, these effects change the absolute current value at very low bias via lowering the Schottky barrier.…”

Section: Introductionmentioning

confidence: 99%

“…[12][13][14][15][16][17] The temperature dependence of the I-V characteristics allows us to understand different aspects of conduction mechanisms and the calculation of interface states. [9][10][11][12][13][14][15] In low dimensional systems, the Schottky barrier height depends not only on the work functions of the metal but also on the pinning of the Fermi level by surface states, image force lowering, field penetration and the existence of an interfacial insulating layer, these effects change the absolute current value at very low bias via lowering the Schottky barrier. The deviation in barrier heights and the ideality factor and has simply been proposed by the impacts of asymmetric contact, the influence of interfacial layers and/or surface states.…”

Section: Introductionmentioning

confidence: 99%

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Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

Hussain

Soomro

Bano

et al. 2013

Journal of Applied Physics

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This paper presents in-depth analysis of I-V-T characteristics of Au/ZnO nanorods Schottky diodes. The temperature dependence I-V parameters such as the ideality factor and the barrier heights have been explained on the basis of inhomogeneity. Detailed and systematic analysis was performed to extract information about the interface trap states. The ideality factor decreases, while the barrier height increases with increase of temperature. These observations have been ascribed to barrier inhomogeneities at the Au/ZnO nanorods interface. The inhomogeneities can be described by the Gaussian distribution of barrier heights. The effect of tunneling, Fermi level pinning, and image force lowering has contribution in the barrier height lowering. The recombination-tunneling mechanism is used to explain the conduction process in Au/ZnO nanorods Schottky diodes. The ionization of interface states has been considered for explaining the inhomogeneities.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

Hussain

Soomro

Bano

et al. 2013

Journal of Applied Physics

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“…One of the reasons for this decrease can be explained by the increase in the temperature of the panels caused by the addition of sand. Several studies have already shown that the ideality factor decreases with the increasing temperature of solar cells [42][43][44][45][46]. The results of the I s average current show that this is the parameter that suffered the greatest variations with the introduction of sand, as presented in Figures 8 and 9.…”

Section: Impact Of Sand In the Input Parameters Of 1m5pmentioning

confidence: 80%

Experimental Investigation and Modelling of Sediments Effect on the Performance of Cadmium Telluride Photovoltaic Panels

Gonçalves¹,

Fernandes

Torres

et al. 2023

Energies

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Of the different renewable sources of energy, photovoltaic energy has one of the highest potentials. In recent decades, several technological and research advances have contributed to the consolidation of its potential. One current photovoltaic energy research topic is the analysis of the impact of sediments on the panels’ performance. The development of models to predict the performance of panels in the presence of sediments may allow for better decision-making when considering maintenance operations. This work contributed to the investigation of the influence of sand on the production of photovoltaic energy in cadmium telluride (CdTe) panels. Six panels of this type with different colors and transparencies were experimentally tested with and without the presence of sand. The impact of the sand on the cells’ performance was evaluated by analyzing the change in the 1M5P model’s parameters and in the power, efficiency, and fill factors. The experimental results show different negative impacts on the output power of the CdTe panels, from −14% in the orange panel to −36% in the green panel. Based on this study, the development of a model capable of predicting the effect of the sand on these panels was introduced. The developed model was validated experimentally, with a maximum deviation of 4.6%. These results can provide support for the decision-making around maintenance activities and for the development of new techniques to avoid sediment deposition on CdTe panels.

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“…Ejderha et al [22] have studied the current-voltage characteristics of Ni/p-InP Schottky diodes in the temperature range of 60 to 400 K with steps of 10 K. They have reported that the ideality factor (n) and apparent barrier height (U ap ) are 1.27, 0.87 eV at 300 K and 1.13, 0.91 eV at 400 K, respectively. Sankar Naik et al [23] have investigated the temperaturedependent electrical parameters and current transport mechanisms of Pd/V/n-InP Schottky rectifiers in the temperature range of 200-400 K. They have observed that the barrier heights and ideality factors have varied from 0.48 to 0.65 eV (I-V) and 0.85 to 0.69 eV (C-V) and the ideality factor (n) from 4.87 to 1.58 in the temperature range of 200-400 K.…”

Section: Introductionmentioning

confidence: 98%

Temperature-dependent electrical parameters and current transport mechanisms of Ru/Ti/n-InP Schottky diodes

Reddy¹,

Padmasuvarna

Narasappa

et al. 2015

Indian J Phys

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The temperature-dependent electrical properties of Ru/Ti/n-InP Schottky diodes have been investigated in the temperature range of 120 to 400 K. The estimated barrier heights for the Ru/Ti/n-InP Schottky barrier diode from the I-V and C-V characteristics vary from 0.24 to 0.73 eV (I-V) and 0.94 to 0.74 eV (C-V) and the ideality factor (n) from 4.65 to 1.80 in the temperature range of 120-400 K. It has been observed that the ideality factor decreases while the barrier height increases with the increase in temperature. The barrier height (U b ), ideality factor (n) and series resistance (R s ) of the Ru/Ti/n-InP Schottky diode have been also determined using Cheung's and Norde methods. The discrepancy between the barrier heights obtained from the I-V and C-V characteristics is discussed. The interface state densities (N ss ) extracted for the Ru/Ti/n-InP Schottky diode are in the range of 6.75 9 10 13 eV -1 cm -2 (E c -0.23 eV)-1.09 9 10 14 eV -1 cm -2 (E c -0.17 eV) at 120 K and 1.67 9 10 13 eV -1 cm -2 (E c -0.75 eV)-5.02 9 10 13 eV -1 cm -2 (E c -0.59 eV) at 400 K. It is observed that the interface state density (N ss ) decreases with increase in temperature. Results reveal that the conduction current is dominated by Poole-Frenkel emission in the temperature range from 120 to 320 K and by Schottky emission above 360 K.

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Temperature Dependency And Current Transport Mechanisms Of Pd/V/n-type InP Schottky Rectifiers

Cited by 38 publications

References 2 publications

Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

Experimental Investigation and Modelling of Sediments Effect on the Performance of Cadmium Telluride Photovoltaic Panels

Temperature-dependent electrical parameters and current transport mechanisms of Ru/Ti/n-InP Schottky diodes

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