Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

Hussain, I.; Soomro, Muhammad Yousuf; Bano, Nargis; Nur, Omer; Willander, Magnus

doi:10.1063/1.4810924

Cited by 51 publications

(27 citation statements)

References 37 publications

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“…Therefore, tunnelling will be the dominant transport mechanism of charge carriers through the patches at lower . As temperature increase, more electrons access sufficient energy to surmount the barrier height areas through TE, explaining the behaviour of barrier height increasing with increasing temperature [14].…”

Section: Resultsmentioning

confidence: 99%

Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

Mayimele

Rensburg

Auret

et al. 2016

Physica B: Condensed Matter

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We report on the analysis of current voltage (I-V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80-320 K temperature range. Assuming thermionic emission (TE) theory, the forward bias I-V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung's method in the extraction of the series resistance with Ohm's law, it was observed that at lower temperatures (T<180 K) the series resistance decreased with increasing temperature, the absolute minimum was reached near 180 K and increases linearly with temperature at high temperatures (T>200 K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99 eV and a standard deviation of 0.02 eV. A mean barrier height of 0.11 eV and Richardson constant value of 37 A cm -2 K -2 were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights.

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Section: Resultsmentioning

confidence: 99%

Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

Mayimele

Rensburg

Auret

et al. 2016

Physica B: Condensed Matter

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“…At low temperatures, electrons are able to transcend the lower barrier through tunneling [37]. However, as the temperature increases, more electrons gain sufficient energy to transcend the barrier height areas due to thermionic emission, which is responsible for the barrier height increasing with increasing temperature [39]. We further studied the effect of voltage and frequency on the capacitance (C-V-f) of the diodes to characterize the junction properties.…”

Section: Thermal Analysis Of the Alloysmentioning

confidence: 99%

New type of Schottky diode-based Cu–Al–Mn–Cr shape memory material films

et al. 2016

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Cr-doped CuAlMn shape memory alloys were produced by arc melting method. The effects of Cr content on microstructure and transformation parameters of were investigated. The alloys were characterized by X-ray analysis, optical microscope observations and differential scanning calorimetry measurements. The grain size of the alloys was decreased by the addition of Cr into CuAlMn alloy system. The martensite transformation temperature was shifted both the lower temperature and higher temperature with the addition of chromium. This change was explained on the basis of the change in the thermodynamics such as enthalpy, entropy and activation energy values. The obtained results indicate that the phase transformation temperatures of the CuAlMn alloy system can be controlled by addition of Cr. We fabricated a Schottky barrier diode and observed that ideality factor and barrier height increase with increasing temperature. The diodes exhibited a thermal sensor behavior. This indicates that Schottky diode-based Cu-Al-Mn-Cr shape memory material films can be used as a sensor in high-temperature measurement applications.

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“…Several researchers [1,5,[17][18][19] have investigated the temperature-dependence of the I-V characteristics of metal/ZnO Schottky diodes and determine several diode parameters in different temperature regions. Asil et al [19] were used in defining the inhomogeneities.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

Mayimele

Diale

Mtangi

et al. 2015

Materials Science in Semiconductor Processing

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We report on a systematic investigation of temperature dependent current-voltage (I-V) characteristics of Pd/ZnO Schottky barrier diodes in the 30-300 K temperature range. The ideality factor was observed to decrease with increase in temperature, whilst the barrier height increases with increase in temperature. The observed trend has been attributed to barrier inhomogeneities, which results in a distribution of barrier heights at the interface.

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Systematic study of interface trap and barrier inhomogeneities using I-V-T characteristics of Au/ZnO nanorods Schottky diode

Cited by 51 publications

References 37 publications

Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

New type of Schottky diode-based Cu–Al–Mn–Cr shape memory material films

Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

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