We report on the analysis of current voltage (I-V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80-320 K temperature range. Assuming thermionic emission (TE) theory, the forward bias I-V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung's method in the extraction of the series resistance with Ohm's law, it was observed that at lower temperatures (T<180 K) the series resistance decreased with increasing temperature, the absolute minimum was reached near 180 K and increases linearly with temperature at high temperatures (T>200 K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99 eV and a standard deviation of 0.02 eV. A mean barrier height of 0.11 eV and Richardson constant value of 37 A cm -2 K -2 were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights.
Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 100, 082103 (2012) Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Appl. Phys. Lett. 100, 052114 (2012) The influence of Al composition on point defect incorporation in AlGaN Appl. Phys. Lett. 100, 043509 (2012) Defect characterization in Mg-doped GaN studied using a monoenergetic positron beam J. Appl. Phys. 111, 014508 (2012) Additional information on J. Appl. Phys. Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (E c -0.04 eV, E c -0.07 eV, E c -0.19 eV, E c -0.31 eV, E c -0.53 eV, and E c -0.61 eV). The trap, E c -0.04 eV, labelled E1 0 and having a trap signature similar to irradiation induced defect E1, appears to be metastable. E c -0.31 eV and E c -0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.