Electrical and structural properties of double metal structure Ni/V Schottky contacts on n-InP after rapid thermal process

Naik, S. Sankar; Reddy, V. Rajagopal; Choi, Chel‐Jong; Bae, Jong‐Sup

doi:10.1007/s10853-010-5020-4

Cited by 10 publications

(8 citation statements)

References 27 publications

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“…These vacancies act as donors, which reduce the barrier height upon annealing as well as increase the ideality factor [36]. Similar results were reported by Sankar Naik et al [37] and Bhaskar Reddy et al [38] in the case of Ni/V/n-InP and Au/Ni/n-InP Schottky diodes at different annealing temperatures. They strongly suggested that the barrier height would be influenced by the interfacial products.…”

Section: And the F(v) Is Given Bysupporting

confidence: 65%

Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

Reddy¹,

Padmasuvarna

Narasappa

et al. 2015

Superlattices and Microstructures

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Section: And the F(v) Is Given Bysupporting

confidence: 65%

Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

Reddy¹,

Padmasuvarna

Narasappa

et al. 2015

Superlattices and Microstructures

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“…Several metal schemes have been used to form Schottky contacts to n‐type InP in the past 8–20. Some of them were thermally treated and the effects of annealing were studied.…”

Section: Introductionmentioning

confidence: 99%

“…They reported that the double metal contact structure provides better rectification characteristics than conventional single metal/n‐InP Schottky diodes. Recently, Sankar Naik et al 20 studied the effect of annealing temperature on electrical and structural properties of double metal structure Ni/V Schottky contacts to n‐InP. They reported that the BH decreased with annealing temperature compared to the as‐deposited one.…”

Section: Introductionmentioning

confidence: 99%

Structural, electrical, and surface morphological characteristics of rapidly annealed Pt/Ti Schottky contacts to n‐type InP

Reddy

Naik

et al. 2011

Physica Status Solidi (a)

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We have investigated the electrical and structural properties of Pt/Ti metallization scheme on n‐type InP as a function of annealing temperature using current–voltage (I–V), capacitance–voltage (C–V), Auger electron spectroscopy (AES), and X‐ray diffraction (XRD) measurements. Measurements showed that barrier height of as‐deposited Pt/Ti Schottky contact is 0.62 eV (I–V) and 0.76 eV (C–V). Experimental results indicate that high‐quality Schottky contact with barrier height and ideality factor of 0.66 eV (I–V), 0.80 eV (C–V), and 1.14 can be achieved after annealing at 400 °C for 1 min in N2 atmosphere. Further, it is observed that the barrier height slightly decreases to 0.55 eV (I–V) and 0.71 eV (C–V) after annealing at 500 °C. Norde method is also employed to calculate the barrier height of Pt/Ti Schottky contacts. The obtained values are in good agreement with those obtained by I–V measurements. These results indicate that the optimum annealing temperature for the Pt/Ti Schottky contact is 400 °C. According to AES and XRD analysis, the formation of indium phases at the Pt/Ti/n‐InP interface could be the reason for the increase of Schottky barrier height (SBH) after annealing at 400 °C. Results also showed the formation of phosphide phases at the interface. This may be the reason for the decrease in the barrier height after annealing at 500 °C. The AFM results showed that the overall surface morphology of Pt/Ti Schottky contact is reasonably smooth.

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“…Many researchers have studied the electrical and structural properties of Schottky contacts on n‐InP 13–22. Eftekhari 13 investigated the effect of rapid thermal annealing (RTA) on the electrical properties of Ni and Pd contacts on n‐InP.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, Ashok et al 21 studied the effect of annealing on electrical and structural properties of Pd/n‐InP Schottky contact, and reported that the presence of an insulating layer was responsible for the variation in the barrier heights. Very recently, Sankar Naik et al 22 investigated the rapid thermal annealing effects on the electrical and structural properties of Ni/V Schottky contacts on n‐InP. They reported that the barrier heights are effectively influenced by the rapid thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n‐type InP

Devi

Jyothi

Reddy

et al. 2011

Physica Status Solidi (a)

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In this article, we have investigated the effects of rapid thermal annealing on the electrical and structural properties of Ru/Cu Schottky contacts on n-InP by current density-voltage (J-V), capacitance-voltage (C-V), Secondary ion mass spectrometer (SIMS) and X-ray diffraction (XRD) measurements. The Schottky barrier height (SBH) of the as-deposited Ru/Cu Schottky contact is found to be 0.65 eV (I-V) and 0.84 eV (C-V), respectively. The obtained barrier height values 0.81 eV (I-V), 0.95 eV (C-V) at 100 8C, 0.85 eV (I-V), 1.02 eV (C-V) at 200 8C, 0.80 eV (I-V), 0.90 eV (C-V) at 300 8C and 0.75 eV (I-V), 0.88 eV (C-V) at 400 8C. It is observed that the SBH increases with annealing temperature up to 200 8C. Further, increase in the annealing temperature up to 400 8C, SBH decreases compared to the one at 200 8C annealed samples.Norde method is also used to calculate the barrier height of Ru/Cu Schottky contact. Based on the above results, the optimum annealing temperature for the Ru/Cu Schottky contact is 200 8C. According to SIMS and XRD results, the formation of indium phases at the interface may be the reason for the increase of barrier height after annealing at 200 8C. The AFM results showed that the overall surface morphology of Ru/Cu Schottky contact is fairly smooth even after annealing at 400 8C.

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Electrical and structural properties of double metal structure Ni/V Schottky contacts on n-InP after rapid thermal process

Cited by 10 publications

References 27 publications

Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

Structural, electrical, and surface morphological characteristics of rapidly annealed Pt/Ti Schottky contacts to n‐type InP

Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n‐type InP

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