Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

Reddy, Y. Munikrishna; Padmasuvarna, R.; Narasappa, T. Lakshmi; Sreehith, P.; Padma, R.; Rao, L. Dasaradha; Reddy, V. Rajagopal

doi:10.1016/j.spmi.2015.07.068

Cited by 7 publications

(1 citation statement)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The GO interlayer in‐between Ti Schottky layer and InP semiconductor is used for increasing the BH so as to decrease the interface state density as indicated at previous works. [ 16–18 ]…”

Section: Introductionmentioning

confidence: 99%

The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method

Çatır

2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

Ti/GO/n-InP Schottky barrier diode (SBD) is obtained by growing graphene oxide (GO) film on n/InP semiconductor using easy and economical spray pyrolysis method. The effect of GO as the interfacial layer on device performance of Ti/GO/n-InP SBD is investigated in detail. The optical absorbance spectra show that bandgap energy of the GO film is 3.57 eV. The optical transmittance value of 79.5% is in consistent with the absorbance spectra of GO film. The barrier heights (BHs) that are estimated for the Ti/GO/n-InP SBD vary from 0.263 to 0.980 eV (I-V) and 1.328 to 1.006 eV (C-V) from the I-V and C-V measurements in the temperature range of 100-400 K. The contradiction between the BHs from the I-V and C-V characteristics is discussed. The mean BH values are found to be Φ b01 ¼ 0.98 eV (250-400 K) and Φ b02 ¼ 0.73 eV (100-250 K) from the Φ b0-1/2kT plot. From the modified Richardson plots based on a Gaussian distribution of BH, Φ b01 ¼ 0.93 (250-400 K) and Φ b02 ¼ 0.69 eV (100-250 K) and A* is calculated to be 12.44 and 12.73 A cm À2 K À2 , respectively. The I-V-T and C-V-T measurements demonstrate that carrier transport mechanism of Ti/GO/n-InP is well explained by thermionic emission (TE) mechanism with a double Gaussian distribution of the Schottky barrier heights (SBHs).

show abstract

Section: Introductionmentioning

confidence: 99%

The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method

Çatır

2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

show abstract

Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

2023

View full text Add to dashboard Cite

Visible transparent $$\mathrm{Cu}/\mathrm{n}-\mathrm{ZnO}$$ Cu / n - ZnO and $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}O\left(x=0.14\right) \mathrm{TZO},$$ Cu / Zn 1 - x Sn x O x = 0.14 TZO , Schottky junctions were successfully fabricated on ITO-coated glass substrates via direct current magnetron reactive sputtering method. The structural, morphological, optical, and electrical properties were thoroughly investigated. The polycrystalline nature of the samples was confirmed by XRD studies. FESEM images validate the changes in surface morphology after doping and annealing, and AFM analysis confirmed the variation in surface roughness. The electrical analysis reveals the presence of a Schottky barrier in the fabricated devices. In dark condition, three-order rectification ratio was observed. A two-order increase in leakage current was also observed after illuminating 365 nm UV light of power 60 µW/cm2. The figures of merits of sensors, such as responsivity, detectivity, response speed, and linear dynamic range, were thoroughly investigated. The fabricated sensor had a responsivity of about 07.80 mA/W and a detectivity of 1.39 × 1011 Jones. At zero bias, the sensor also demonstrated a transient photocurrent response of approximately 783 ms for rise and 876 ms for fall. Similarly, 33.70 dB of linear dynamic range was observed. These findings suggests that Cu/TZO Schottky diodes could be useful for self-powered, visible transparent UV photosensors in next-generation optoelectronic devices.

show abstract

Electronic properties and lateral inhomogeneous barrier heights of n-InP rods/p-Si heterojunction prepared by liquid phase epitaxy

El-Menyawy

Ashery

El-Nahass

2017

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

Cited by 7 publications

References 38 publications

The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method

The Structural, Optical, and Electrical Characterization of Ti/n‐InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method

Self-powered visible transparent $$\mathrm{Cu}/{\mathrm{Zn}}_{\left(1-x\right)}{\mathrm{Sn}}_{\left(x\right)}\mathrm{O}$$ Schottky-based ultraviolet photosensors fabricated via DC magnetron sputtering

Electronic properties and lateral inhomogeneous barrier heights of n-InP rods/p-Si heterojunction prepared by liquid phase epitaxy

Contact Info

Product

Resources

About