Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n‐type InP

Abstract

In this article, we have investigated the effects of rapid thermal annealing on the electrical and structural properties of Ru/Cu Schottky contacts on n-InP by current density-voltage (J-V), capacitance-voltage (C-V), Secondary ion mass spectrometer (SIMS) and X-ray diffraction (XRD) measurements. The Schottky barrier height (SBH) of the as-deposited Ru/Cu Schottky contact is found to be 0.65 eV (I-V) and 0.84 eV (C-V), respectively. The obtained barrier height values 0.81 eV (I-V), 0.95 eV (C-V) at 100 8C, 0.85 eV (I-V), 1.02 eV (C-V) at 200 8C, 0.80 eV (I-V), 0.90 eV (C-V) at 300 8C and 0.75 eV (I-V), 0.88 eV (C-V) at 400 8C. It is observed that the SBH increases with annealing temperature up to 200 8C. Further, increase in the annealing temperature up to 400 8C, SBH decreases compared to the one at 200 8C annealed samples.Norde method is also used to calculate the barrier height of Ru/Cu Schottky contact. Based on the above results, the optimum annealing temperature for the Ru/Cu Schottky contact is 200 8C. According to SIMS and XRD results, the formation of indium phases at the interface may be the reason for the increase of barrier height after annealing at 200 8C. The AFM results showed that the overall surface morphology of Ru/Cu Schottky contact is fairly smooth even after annealing at 400 8C.

Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

“…26 In contrast, C-V measurements give the mean barrier height which is usually smaller than Φ B,JV for single crystalline semiconductors with extremely low trap state densities. [28][29][30] However, in amorphous semiconductors such as IGZO, due to the contribution of relatively large subgap trap density to the measured C, Φ B,CV is sometimes higher than Φ B,JV . 15,16 The very low |∆Φ| (0.02-0.18 eV) of samples A, B, C, and D indicates a high uniformity of barrier height and high quality of the Schottky contacts, which agrees well with the low n (~1.1) of these diodes.…”