Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/p-type InP Schottky Structure

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Rapid thermal annealing effects on the electrical, structural and morphological properties of Yb/p-type InP Schottky Structure

Cited by 12 publications

References 36 publications

The deep investigation of structural and opto-electrical properties of Yb2O3 thin films and fabrication of Al/Yb2O3/p-Si (MIS) Schottky barrier diode

The deep investigation of structural and opto-electrical properties of Yb2O3 thin films and fabrication of Al/Yb2O3/p-Si (MIS) Schottky barrier diode

Barrier Parameters and Current Transport Characteristics of Ti/p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer

Structural, Chemical and Electrical Properties of Au/La2O3/n-GaN MIS Junction with a High-k Lanthanum Oxide Insulating Layer

Contact Info

Product

Resources

About