Barrier Parameters and Current Transport Characteristics 
of Ti/p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer

Sreenu, K; Prasad, C. V. R. K.; Reddy, V. Rajagopal

doi:10.1007/s11664-017-5611-9

Cited by 34 publications

(10 citation statements)

References 40 publications

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“…In SE, the carrier transport occurs from the contact interface instead of the bulk material due to the nonuniformity structure of the interlayer. While in FPE, the carrier transport is formed from the metal into conductive dislocations via trap or states [28,30]. Another parameter affecting the efficiency of Schottky diodes is the rectification ratio (RR), which is defined as RR = I F /I R .…”

Section: Electrical Characteristicsmentioning

confidence: 99%

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

et al. 2020

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The present study aims to investigate the effect of (PVP: Sn-TeO2) interfacial layer on the electrical parameters of the Al/p-Si diode. For this aim, (Sn-TeO2) nanostructures were developed by the ultrasound-assisted method, and both their electrical and optical characteristics were investigated by XRD, SEM, EDS, and UV–Vis methods. The bandgap of Sn-TeO2 was found as 4.65 eV from the (αhυ)2 vs (hυ) plot. The main electrical parameters of the Al/p-Si diodes with/ without (PVP: Sn-TeO2) interlayer, such as ideality factor (n), zero-bias barrier height (Φ0), and series resistance (Rs), were calculated by applying and comparing two methods of thermionic emission theory and Cheung’s functions. These results show that the presence of the (PVP: Sn-TeO2 interlayer, along with the increase of Φ0, and the decrease of n and Rs, led to a significant increment in the rectification of MPS when compared to MS diode. The current-transport mechanisms (CTMs) of them were examined through the forward LnIF − LnVF and reverse LnIR − VR0.5 bias currents, and then, the Poole–Frenkel and Schottky field-lowering coefficients (β) were calculated and obtained its value from the theoretical and experimental methods showed that the mechanism of the reverse current of MS and MPS diodes is governing by the Schottky emission and Pool-Frenkel mechanism, respectively.

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Section: Electrical Characteristicsmentioning

confidence: 99%

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

et al. 2020

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“…The organic solids have been employed widely because of durability and barrier modification effects in the metal/interfacial film/semiconductor (MIS) junctions [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. For example, the basic diode parameters of metal/semiconductor (MS) junctions could be adjusted by organic interlayer.…”

Section: Introductionmentioning

confidence: 99%

“…Padma et al [3] reported that the ideality factor (n) and barrier height (BH) were obtained as 0.74 eV and 0.84 eV for the diodes without and with PEO layer. Sreenu et al [5] performed the electrical characteristics of Ti/Orange G (OG)/p-InP structures. They [5] found the values of the BH as 0.83 eV and 0.94 eV for the conventional contact without OG layer and Ti/OG/p-InP contact with OG layer.…”

Section: Introductionmentioning

confidence: 99%

Morphological and electrical properties of Ag/p-type indium phosphide MIS structures with malachite green organic dyes

Asubay¹,

Ava²,

Güllü³

2022

JOR

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Malachite Green (MG) organic dye thin film was prepared by simple drop casting method. Microstructural property of MG layer was investigated by Scanning Electron Microscopy (SEM). SEM image indicated that MG organic thin layer was formed from nanoclusters. Later, it was fabricated Ag/Malachite Green(MG)/p-InP diodes by drop cast method. The barrier height (BH) and ideality factor by using I-V characteristics for the device were found as 0.75 eV and 1.68. By using the Norde method, the BH and the resistance of neutral region of the device were extracted as 0.80 eV and 1.17x104 Ω. The interfacial states concentration of the device has been seen to decrease from 2.79×1013 eV-1 cm-2 to 5.80×1012 eV-1 cm-2 . By using capacitance-voltage technique, the values of the built-in voltage, BH and semiconductor doping density were found as 1.22 V, 0.83 eV and 1.87x1017 cm-3 for the Ag/MG/p-InP diode, respectively.

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“…There are only a few reported studies in open literature on the tuning of the Schottky barrier properties of metal/ bulk InP contact by inserting a very thin interfacial layer between the M/S interface by different research groups [11][12][13][14][15][16][17][18][19][20][21]. Lin et al [16] have prepared the MoS 2 /p-InP heterojunction diode by chemical vapor deposition.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Illumination Effects on the Electrical Properties of Au/GO/p-InP Heterojunction with a Graphene Oxide Interlayer

et al. 2020

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In this work, the electrical property of Au/graphene oxide/p-InP hetero-structure has been evaluated by I–V and C–V measurements in dark and illuminated conditions (visible light). The diode exhibited significant rectifying behavior, thus indicating the heterojunction-type diode. The key electrical parameters of heterojunction diode including ideality factor (n), series resistance (Rs), shunt resistance (Rsh), and barrier height (Фb) are estimated from I–V data based on the theory of thermionic emission. The modified Norde and Cheung’s methods were utilized to evaluate the electrical parameters and compared the results. The current conduction mechanism at different voltage regions of I–V has also been investigated. The variation of 1/C2 versus voltage signifies linearity at high frequency (1 MHz), indicating that the type of heterojunction can be abrupt. The experimental outcomes of this study revealed that the performance of heterojunction diode in dark is considerably good as compared to the illumination condition with respect to the lower values of Фb, n, Rs, and interface state density (Nss).

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Barrier Parameters and Current Transport Characteristics of Ti/p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer

Cited by 34 publications

References 40 publications

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

On the electrical characteristics of Al/p-Si diodes with and without (PVP: Sn-TeO2) interlayer using current–voltage (I–V) measurements

Morphological and electrical properties of Ag/p-type indium phosphide MIS structures with malachite green organic dyes

Investigation of Illumination Effects on the Electrical Properties of Au/GO/p-InP Heterojunction with a Graphene Oxide Interlayer

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