The deep investigation of structural and opto-electrical properties of Yb2O3 thin films and fabrication of Al/Yb2O3/p-Si (MIS) Schottky barrier diode

Panneerselvam, Arunkumar; Mohan, K.S.; Marnadu, R.; Chandrasekaran, J.

doi:10.1007/s10971-021-05683-y

Cited by 13 publications

(2 citation statements)

References 42 publications

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“…The high n value results from the N ss , inhomogeneities of BH and R s . [18][19][20][21][22] The rectifying-ratio (RR) of a diode is defined as I F /I R . Figure 3 shows the RR vs T plot of the diode at ±3 V. The RR value decreases with increase in the temperature.…”

Section: Resultsmentioning

confidence: 99%

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Buyukbas-Ulusan,

Tataroglu,

Altındal-Yerişkin

2023

ECS J. Solid State Sci. Technol.

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Temperature dependent electrical-parameters and CTCs in Au/Al2O3/n-Si SDs have been analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the value of quality/ideality factor (n) decreases, zero bias potential barrier height (BH, B0) increases with increasing temperature. The value of Richardson constant (A*) and activation energy (Ea) were also derived from the conventional Richardson plot (RP) as 0.567 eV and 7.34x10-3 A.cm-2K-2, respectively. This low A* value shows that deviation from standard thermionic-emission (TE) model and to determine whether this situation may be described by Gaussian-distribution (GD) model or not, Bo vs n and Bo vs q/(2kT) curves were illustrated. The  ̅B value was found as 1.19 eV from the linear ΦB0 vs n plot for ideal case (n=1). The mean-value of BH ( ) and standart deviation (σs) values were found from the Bo vs q/(2kT) curve as 1.130 eV and 0.127 V, respectively. By using value of σs, RP was modified and then  ̅B0 and A* values were found as 1.128 eV and 108.88 Acm-2K-2, respectively, and this value of A*very close to its theoretical value (=112 Acm-2K-2). The surface state density (Nss) were also obtained from the forward bias IV data for three-temperatures.

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Section: Resultsmentioning

confidence: 99%

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Buyukbas-Ulusan,

Tataroglu,

Altındal-Yerişkin

2023

ECS J. Solid State Sci. Technol.

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“…In addition, there is no shift observed in the diffraction angles of the peaks and the relative intensities of the obtained peaks also remains constant. This might be a consequence of the calcination process which is effective in producing high phase purity in the samples with desired composition [14]. Furthermore, the size of the crystallites (D) in the synthesized NiO nano particles was calculated by using Debye-Scherrer's formula mentioned in the following Eq.…”

Section: Xray Diffraction Analysismentioning

confidence: 99%

Enhanced Anti-Corrosion Efficiency and Antimicrobial Properties of Green Synthesised Nickel Oxide (NiO) Nanoparticles

Sheit¹,

Mubarak²,

Mohamed³

et al. 2023

Preprint

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The numerous treatments for nano particles in the interdisciplinary field of biomedical self-discipline cannot be counted. Many researchers in biomedicine are intrigued by metallic-based nano particles. Several methods for synthesizing metal nano particles are under investigation, and green synthesis is considered a presumed choice due to its environmentally benign nature, safety from harmful chemicals, and economically favorable for synthesis. The target of the current research include the synthesis of nickel oxide nano particles (NiO NPs) through green route by using the extract prepared from the bark of Acacia Nilotica, and the analysis of its characteristics using XRD, SEM, EDAX, IR, UV-VIS, Photo luminescence spectra, microbial activity, mass loss scheme and electrochemical techniques. The diffraction analysis using X-ray (XRD) indicates the presence of NiO2 compound in the prepared nano particles. The Fourier transform Infrared spectroscopy (FTIR) confirmed the association of peaks with the C-H and Ni-O bonds present. The micro images from Scanning Electron Microscope (SEM) exhibited cubic cluster morphology on its surface. The UV Vis spectra showed a maximum absorption at 264 nm. The Photoluminescence spectrum demonstrated that the green synthesized NPs of NiO has a modified emission band due to the presence of oxygen deficiencies and induced surface imperfections. A study on its microbial application confirms that the prepared NiO NPs have a great potential for inhibition against bacteria such as S. aureus and E. coli and also instrumental against microorganic fungi, Candida albicans and A. niger. The mass loss system shows a restraint effectiveness of 93.68 percent in carbon steel and the electrochemical study supports the formation of a defensive protective layer on the cathodic locales of the carbon steel surface.

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The comparison of structural and electro-optical properties of (In, Yb)2O3 thin films with those of In2O3 and Yb2O3 thin films

Aldemir

Bayram

Kaleli

2023

J Mater Sci: Mater Electron

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The deep investigation of structural and opto-electrical properties of Yb2O3 thin films and fabrication of Al/Yb2O3/p-Si (MIS) Schottky barrier diode

Cited by 13 publications

References 42 publications

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Enhanced Anti-Corrosion Efficiency and Antimicrobial Properties of Green Synthesised Nickel Oxide (NiO) Nanoparticles

The comparison of structural and electro-optical properties of (In, Yb)2O3 thin films with those of In2O3 and Yb2O3 thin films

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The deep investigation of structural and opto-electrical properties of Yb2O3 thin films and fabrication of Al/Yb2O3/p-Si (MIS) Schottky barrier diode

Cited by 13 publications

References 42 publications

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al2O3 Interfacial Layer over Wide Temperature Range

Enhanced Anti-Corrosion Efficiency and Antimicrobial Properties of Green Synthesised Nickel Oxide (NiO) Nanoparticles

The comparison of structural and electro-optical properties of (In, Yb)2O3 thin films with those of In2O3 and Yb2O3 thin films

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Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range