Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al₂O₃ Interfacial Layer over Wide Temperature Range

Abstract

Temperature dependent electrical-parameters and CTCs in Au/Al2O3/n-Si SDs have been analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the value of quality/ideality factor (n) decreases, zero bias potential barrier height (BH, B0) increases with increasing temperature. The value of Richardson constant (A*) and activation energy (Ea) were also derived from the conventional Richardson plot (RP) as 0.567 eV and 7.34x10-3 A.cm-2K-2, respectively. This low A* value shows that deviation from standard thermionic-emission (TE) model and to determine whether this situation may be described by Gaussian-distribution (GD) model or not, Bo vs n and Bo vs q/(2kT) curves were illustrated. The  ̅B value was found as 1.19 eV from the linear ΦB0 vs n plot for ideal case (n=1). The mean-value of BH ( ) and standart deviation (σs) values were found from the Bo vs q/(2kT) curve as 1.130 eV and 0.127 V, respectively. By using value of σs, RP was modified and then  ̅B0 and A* values were found as 1.128 eV and 108.88 Acm-2K-2, respectively, and this value of A*very close to its theoretical value (=112 Acm-2K-2). The surface state density (Nss) were also obtained from the forward bias IV data for three-temperatures.