The influence of rapid thermal annealing effect on the electrical and structural properties of Au/Cu Schottky contacts on n-InP has been investigated by the current-voltage (I-V), capacitance-voltage (C-V), auger electron spectroscopy (AES) and the X-ray diffraction (XRD) techniques. As-deposited sample has a barrier height of 0.64 eV (I-V), 0.76 eV (C-V) which increases to 0.82 eV (I-V), 1.04 eV (C-V) after annealing at 400°C for 1min in nitrogen ambient. However, the barrier height decreases to 0.75 eV (I-V), 0.88 eV (C-V) after annealing at 600°C for 1min. Norde method is also employed to calculate the barrier heights of Au/Cu Schottky rectifiers and the values are 0.66 eV for as-deposited, 0.83 eV for 400°C and 0.76 eV for 600°C annealed contacts. These values are in good agreement with the values obtained from I-V method. From the above observations, it is clear that the Schottky barrier height increases with annealing temperatures up to 400°C. Thus, the optimum annealing temperature for the Au/Cu Schottky contact is 400 o C. Based on the AES and XRD results, the formation of indium phases at the Au/Cu/n-InP interface may be responsible for the increase in the barrier height for the contact annealed at 400°C and a corresponding decrease in leakage current. The decrease in the barrier height after annealing at 500 o C may be due to the formation of CuP and Au-P interfacial compounds at the interface. The AFM results showed that the surface morphology of Au/Cu Schottky contact is fairly smooth even after annealing at 500°C.
In this article, we have investigated the effects of rapid thermal annealing on the electrical and structural properties of Ru/Cu Schottky contacts on n-InP by current density-voltage (J-V), capacitance-voltage (C-V), Secondary ion mass spectrometer (SIMS) and X-ray diffraction (XRD) measurements. The Schottky barrier height (SBH) of the as-deposited Ru/Cu Schottky contact is found to be 0.65 eV (I-V) and 0.84 eV (C-V), respectively. The obtained barrier height values 0.81 eV (I-V), 0.95 eV (C-V) at 100 8C, 0.85 eV (I-V), 1.02 eV (C-V) at 200 8C, 0.80 eV (I-V), 0.90 eV (C-V) at 300 8C and 0.75 eV (I-V), 0.88 eV (C-V) at 400 8C. It is observed that the SBH increases with annealing temperature up to 200 8C. Further, increase in the annealing temperature up to 400 8C, SBH decreases compared to the one at 200 8C annealed samples.Norde method is also used to calculate the barrier height of Ru/Cu Schottky contact. Based on the above results, the optimum annealing temperature for the Ru/Cu Schottky contact is 200 8C. According to SIMS and XRD results, the formation of indium phases at the interface may be the reason for the increase of barrier height after annealing at 200 8C. The AFM results showed that the overall surface morphology of Ru/Cu Schottky contact is fairly smooth even after annealing at 400 8C.
The most economical operation of modern power systems is to provide the power generation optimally from different units with possible lowest cost by trying to meet all the system Constraints. This work necessitates an answer to security constrained unit commitment (SCUC) problem with an objective function incorporating equality and inequality constraints of the system. The objective of the problem will be solved using multiple optimization function. The constraints such as real power operating limits, power balance, minimum up and down time, emission, spinning reserve etc. will be subjected to project a solution to the problem by using BAT procedure. The performance of the proposed method is implemented in MATLAB working platform and the performance is evaluated with the testing system of 3-unit and 10-unit system.
Index terms-security constrained unit commitment, BAT algorithm, constraints623 978-1-4799-8047-5/15/$31.00 c 2015 IEEE
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