Neutron Radiation Effects in Junction Field-Effect Transistors

Naik, S. Sankar; Oldham, W.G.

doi:10.1109/tns.1971.4326390

Cited by 11 publications

(2 citation statements)

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“…Radiation damage in JFETs has been well characterized with respect to DC and smallsignal parameters [4,5,6]. However, to our knowledge, no comprehensive study has been made on the behavior of the device noise with respect to radiation.…”

Section: Radiation Damage Mechanism In Jfetsmentioning

confidence: 99%

“…where V is the volume of the depletion region, <j> is the neutron fluence, and a is a leakage current damage constant which relates the neutron fluence to the displacement density and Figure 4: Neutron damage mechanism in silicon. Fast neutrons will damage the crystal and cause vacancies in the lattice, which will increase leakage currents [5]. will depend on processing, temperature, and neutron energy [8].…”

Section: Radiation Damage Mechanism In Jfetsmentioning

confidence: 99%

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Rad-Hard Electronics Development Program for SSC Liquid-Argon Calorimeters

et al. 1990

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The development program for radiation-hard low-noise low-power front-end electronics for SSC calorimetry is described. Radiation doses of up to 20 MEad and neutron fluences of 10 14 neutrons/cm 2 are expected over ten years of operation. These effects are simulated by exposing JFETs to neutrons and ionizing radiation and measuring the resulting bias, leakage current and noise variations. In the case of liquid-argon calorimeters, a large part of the front-end circuitry may be located directly within the low-temperature environment (90 K), placing additional constraints on the choice of components and on the design. This approach minimizes the noise and the response time. The radiation damage test facilities at Argonne will also be described. These include sources of neutrons, electrons, and gamma radiation.

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Section: Radiation Damage Mechanism In Jfetsmentioning

confidence: 99%

Section: Radiation Damage Mechanism In Jfetsmentioning

confidence: 99%