Neutron Produced Trapping Centers in Junction Field Effect Transistors

Gregory, Bob; Naik, S. Sankar; Oldham, W.G.

doi:10.1109/tns.1971.4326413

Cited by 35 publications

(3 citation statements)

References 15 publications

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“…As a consequence, the model postulates that the core of the cluster is capable of acquiring a net charge by capturing majority-carriers. Furthermore, it predicts a large short-term annealing and the effect of the material resistivity on annealing rate [196,199,200] (see also section 6 in chapter II of part I of [1] and [201,202]). Under the assumption of a spherical cluster, the core region of radius r c ≈ 10-25 nm (e.g.…”

Section: (Dlts)mentioning

confidence: 99%

“…Since point defects are mobile at room temperature (e.g. see page 525), a re-arrangement process can take place ( [201] and references therein) resulting in a decrease of cluster effects on the semiconductor electronic properties with time. Large annealing factors ( 50) at early times were measured experimentally [203] and are consistent with the fact that the induced damage depends on the cluster size.…”

Section: (Dlts)mentioning

confidence: 99%

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Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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Silicon is used in radiation detectors and electronic devices. Nowadays, these devices achieving submicron technology are parts of integrated circuits of large to very large scale integration (VLSI). Silicon and silicon-based devices are commonly operated in many fields including particle physics experiments, nuclear medicine and space. Some of these fields present adverse radiation environments that may affect the operation of the devices. The particle energy deposition mechanisms by ionization and non-ionization processes are reviewed as well as the radiation-induced damage and its effect on device parameters evolution, depending on particle type, energy and fluence. The temporary or permanent damage inflicted by a single particle (single event effect) to electronic devices or integrated circuits is treated separately from the total ionizing dose (TID) effect for which the accumulated fluence causes degradation and from the displacement damage induced by the non-ionizing energy-loss (NIEL) deposition. Understanding of radiation effects on silicon devices has an impact on their design and allows the prediction of a specific device behaviour when exposed to a radiation field of interest.

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Section: (Dlts)mentioning

confidence: 99%

Section: (Dlts)mentioning

confidence: 99%

Particle interaction and displacement damage in silicon devices operated in radiation environments

2007

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“…Second, when many carriers are trapped inside a cluster, a Coulomb barrier grows around the extended defect, inhibiting further trapping. In [15], it was argued that, inside depleted regions, it could be difficult to distinguish isolated defect and cluster emission, because the electric field of the depleted region should be dominant with respect to the cluster Coulomb field. This observation does not take into account the phenomenon of level splitting.…”

Section: Introductionmentioning

confidence: 99%

PICTS analysis of extended defects in heavily irradiated silicon

Menichelli¹,

Borchi²,

Li³

et al. 2002

IEEE Trans. Nucl. Sci.

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We report the results of an experimental study on radiation-induced defects in silicon p + n diodes irradiated with 1-MeV neutrons up to a fluence of 2.3 10 15 cm 2 . Heavily irradiated silicon diodes have been studied by means of Photo Induced Current Transient Spectroscopy (PICTS) technique using a variable filling time. For every filling time, a dominant broad and structured peak has been found in the temperature range 200-300 K. Such a broad peak cannot be accounted for by considering isolated point defects, being consistent with a quasi-continuous distribution of deep levels inside the bandgap. In addition, it is observed that the spectral lineshape tends to broaden as the filling time is increased. The details of the lineshape modifications depend strongly on the irradiation fluence of the sample, in such a way that they cannot be explained only in terms of emissions from noninteracting electron states. Thus we suggest that the investigated broad peak should, at least in part, be generated by emission from extended defects, also known as clusters.

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Radiation Damage

Agajanian¹

1976

Semiconducting Devices

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Neutron Produced Trapping Centers in Junction Field Effect Transistors

Cited by 35 publications

References 15 publications

Particle interaction and displacement damage in silicon devices operated in radiation environments

Particle interaction and displacement damage in silicon devices operated in radiation environments

PICTS analysis of extended defects in heavily irradiated silicon

Radiation Damage

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