Annealing Effects on Electrical Properties and Interfacial Reactions of Ni/Cu Schottky Rectifiers on n-Type InP

Abstract

We report on the effect of annealing temperature on electrical, interfacial reactions and surface morphological properties of Ni/Cu Schottky contacts on n-type InP. The extracted barrier height of as-deposited Ni/Cu Schottky contact is 0.59 eV (I-V) respectively. The high-quality Schottky contact with barrier height and ideality factor of 0.65 eV (I-V) and 1.15 respectively, can be obtained after annealing at 300℃ for 1 min in a nitrogen atmosphere. However, annealing at 400℃, results the decrease in the barrier height to 0.54 eV (I-V). From the above observations, it is observed that Ni/Cu Schottky contact exhibited excellent electrical properties after annealing at 300℃. Hence, the optimum annealing temperature for the Ni/Cu Schottky contact is 300℃. Furthermore, Cheung’s functions is used to extract the diode parameters including ideality factor, barrier height and series resistance. According to the XRD analysis, the formation of the indium phases at the Ni/Cu/n-InP interface could be the reason for the increase in the barrier height at annealing temperature 300℃. Further, the degradation of the barrier heights after annealing at 400℃ may be due to the formation of phosphide phases at the Ni/Cu/n-InP interface. Scanning electron microscopy (SEM) results show that the overall surface morphology of the Ni/Cu Schottky contact is reasonably smooth

Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure

“…This is because of the annealing out of defects from the switching layer at 400 °C. At an annealing temperature of 500 °C, both Φ B values for the S3 devices were the lower either because of N 2 incorporated into the WO x layer or the reduction of oxygen and inter-diffusion of W into the WO 3 layer [ 35 , 36 ], which can also help lower the operation voltage to ±4 V (Fig. 3 ).…”

Thermal stability of a Schottky diode fabricated with transfer-free deposition of multilayer graphene on n-GaN by solid-phase reactions

“…The high value of ideality factor might be due to the fact that the conduction mechanism is not perfect thermionic emission or due to high series resistance (R s ). 30) Since Cheung's function is more accurate for determining the diode characteristics of diodes with high R s , 31) we analyzed our results using Cheung's function, which is expressed as 32) dV d ln…”

Effect of annealing temperature on the electrical, structural and surface morphological properties of Ru/Ti Schottky contacts on n -type InP

“…They reported that increase or decrease in the Schottky barrier height upon annealing at elevated temperatures could be attributed to the formation of interfacial phases at the interface. Munikrishna Reddy et al [9] investigated the annealing effect on the electrical properties and interfacial reactions of Ni/Cu Schottky rectifiers on n-InP. They found that the BH decreases with annealing temperature compared to as-deposited one.…”

“…The efforts have been made to improve Schottky barrier heights by several research groups [4][5][6][7][8][9][10][11][12]. For example, Eftekhari [4] investigated the effect of rapid thermal annealing (RTA) on the electrical properties of Ni and Pd contacts on n-InP.…”