Thermal stability of a Schottky diode fabricated with transfer-free deposition of multilayer graphene on n-GaN by solid-phase reactions

Abstract

Multilayer graphene (MLG)/n-GaN Schottky diodes were fabricated by transfer-free deposition of MLG on n-GaN by solid-phase reactions with cobalt as a catalyst. The thermal stability of the diodes was determined from the current–voltage (I–V) characteristics after annealing the diodes in vacuum at 200–500 °C, at intervals of 100 °C. The diode characteristics evaluated using a thermionic emission model and Cheung’s function using I–V data revealed that the Schottky barrier diode (SBD) fabricated with MLG as a Schottky contact on n-GaN showed better thermal stability than the conventional Ni/n-GaN SBD. The prevention of Au diffusion to n-GaN with MLG as a diffusion barrier layer and the unaffected interface reactions between n-GaN and MLG are possible reasons for the improved thermal stability, enabling potential application of this new diode in high-power and high-temperature operations.

Advances in multilayer graphene processes for metallization and high-frequency devices

“…Research on the conductor applications of MLG is advancing, not only for LSI interconnects but also for electrodes of LEDs, 39) solar cells, 53) power devices, 54) electro-magnetic shield layers 55) and high-frequency devices, such as inductors 56) and antennas. 57) Since graphene has unique characteristics of carrier transport based on its band structure and it leads to the high kinetic inductance, it is expected to have a unique response to high frequencies.…”