Advances in multilayer graphene processes for metallization and high-frequency devices

Abstract

Multilayer graphene (MLG) has been expected as an alternative material for nanometer wide interconnects. However, it has not been put into practical use, since the process technology that leads to practical use has been immature. Recent advances in the MLG processes and applications such as MLG capped copper interconnects, direct deposition of MLG by solid-phase deposition at a low-temperature, stable intercalation doping to MLG, and selective CVD of high crystallinity MLG for inductor and antenna applications are reviewed. According to these advances, MLG is considered to be approaching to the practical applications for device metallization and high frequency devices. Based on the characteristics of MLG as a conductor and recent development trends, the prospects and issues for future practical use of MLG graphene are discussed.