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This paper details the transistor aging and gate oxide reliability of Intel's 14nm process technology. This technology introduces Intel's 2 nd generation tri-gate transistor and the 4 th generation of high-κ dielectrics and metal-gate electrodes. The reliability metrics reported here highlight reliability gains attained through transistor optimizations as well as intrinsic challenges from device scaling.

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A summary of NBTI variation is reported on large data-sets across five generations of Intel technologies (90 nm to 22 nm) and a comparison of statistical frameworks is utilized to show the universality of variation metrics across generations.Large volumes of data and modeling are emphasized as critical to enable accurate simulations of NBTI in extreme tails.