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It was demonstrated that Silicon Carbide Schottky Barrier Diodes exhibited anomalous charge collection with heavy ion irradiation. Consequently, the permanent damage and Single-Event Burnout was observed in spite of no known current sustaining mechanism. A model for the mechanism was proposed based on the device simulation.Index Terms-Heavy ion, Schottky barrier diode, silicon carbide, single-event burnout.

It was demonstrated that single-event burnout was observed in silicon carbide Schottky barrier diodes with high energy proton irradiation. The behavior was successfully explained using a failure density function based on the geometric distribution. Responsible spallation fragments to trigger the single-event burnout were identified by Geant4 simulations.Index Terms-High energy protons, Schottky barrier diode, single-event burnout (SEB), silicon carbide (SiC), silicon carbide, single-event burnout.

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