Mechanism for single-event burnout of power MOSFETs and its characterization technique

Single event burnout in power diodes: Mechanisms and models

“…If the applied voltage is not removed from the device quickly, simultaneous high currents and high voltages induce second breakdown of the parasitic bipolar transistor and can result in meltdown of the device. There have been many models to describe this mechanism [1,[7][8][9]. However, none of these models includes the physical destruction of the device caused by thermal processes.…”

“…This model describes the multiplication factor as the ratio of the generated holes to the injected electrons at the base side of the base-collector depletion region. Using a non-destructive technique, Kuboyama et al measured the total generated charge of different power MOSFETs exposed to mono-energetic ions [9].…”

“…1. The collected charge for the MOSFET (2SK725) and the diode (2SK725-TS) when they were exposed to 200 MeV Ni ions (LET=30 MeV/mg/cm 2 ) (Ó 1992 IEEE) [9]. compared to the laboratory stage.…”

Numerical analysis of single event burnout of power MOSFETs

“…In previous work, SEB phenomenon was observed with a new measurement system called EPICS (Energetic Particle Induced Charge Spectroscopy) which could observe charge collection and multiplication effect in the device directly [4].…”

Single event burnout in DC-DC converters for the LHC experiments

“…Nominal Vin Vout Nominal Iout V300B5C200A 300V 180V-375V 5V 40A V300B12C250AL 300V 180V-375V 12V 21A V375B5C200A 375V 250V-425V 5V 40A V375B12C250AL 375V 250V-425V 12V 21A 0 2 4 6 8 10 12 14 16 18 [12]. For MOSFETs operating at low Vds, heavy ion strikes only induce current filaments due to the direct charge deposition of the ion.…”