Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

Kuboyama, S.; Maru, A.; Shindou, H.; Ikeda, Nobuyuki; Hirao, Toshio; Abe, Hiroshi; Tamura, Takashi

doi:10.1109/tns.2011.2171504

Cited by 68 publications

(27 citation statements)

References 11 publications

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“…They observed enhanced charge collection with Ne ions and increased leakage current with Ar and Kr ions. A new damage mode, which introduced the leakage paths between the drain and source, was observed with Kr ions at high drain voltages 190 and also new leakage paths emerged between the drain and source terminals without any damage signature to the gate.…”

Section: Single Event Upsets In Gan Hemtsmentioning

confidence: 98%

“…[187][188][189][190][191][192][193] SEU do not necessarily cause permanent damage to the device, but may cause lasting problems to a system which cannot recover from such an error. In very sensitive devices, a single ion can cause a multiple-bit upset (MBU) in several adjacent memory cells.…”

Section: Single Event Upsets In Gan Hemtsmentioning

confidence: 99%

“…The same HEMTs were unaffected by 14 MeV neutron irradiation and heavy ions with LETs of 1.8 and 18.5 MeV.mg −1 .cm 2 . Kuboyama et al 190 reported several different types of permanent damage in AlGaN/GaN HEMT devices irradiated with Kr, Ne or Ar heavy ions from an accelerator at fluences up to ∼10 8 cm −2 GaN HEMTs using heavy ions. They observed enhanced charge collection with Ne ions and increased leakage current with Ar and Kr ions.…”

Section: Single Event Upsets In Gan Hemtsmentioning

confidence: 99%

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Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

267

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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Section: Single Event Upsets In Gan Hemtsmentioning

confidence: 98%

Section: Single Event Upsets In Gan Hemtsmentioning

confidence: 99%

Section: Single Event Upsets In Gan Hemtsmentioning

confidence: 99%

See 1 more Smart Citation

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

267

130

View full text Add to dashboard Cite

show abstract

“…These devices exhibit charge amplification [4] and suffer from Single Event Gate Rupture, SEGR [5][6][7] but no Single Event Burnout, SEB, was observed on them. A new kind of single event transient effect, called Single Event Switch, SES [8], was observed on 200 V normally on GaN power HEMT.…”

Section: Introductionmentioning

confidence: 99%

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Abbate

Busatto

Iannuzzo

et al. 2015

Microelectronics Reliability

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“…Above device-specific bias voltage levels, silicon-based power devices, such as power MOSFETs, typically experience directly catastrophic failure, either Single Event Gate Rupture (SEGR) or Single Event Burnout (SEB). However, Schottky devices, made of SiC [3], Si [6], and GaN [7]- [9], have been reported to exhibit gradual degradation under heavy-ion exposure. SiC Schottky devices also undergo catastrophic SEB when the bias level during irradiation is sufficiently high [1], [3].…”

mentioning

confidence: 99%

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Javanainen

Galloway

Ferlet-Cavrois

et al. 2016

IEEE Trans. Device Mater. Relib.

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Abstract-Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed.

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Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

Cited by 68 publications

References 11 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

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