Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Javanainen, Arto; Galloway, K.F.; Ferlet-Cavrois, V.; Lauenstein, Jean-Marie; Pintacuda, Francesco; Schrimpf, Ronald D.; Reed, Robert A.; Virtanen, A.

doi:10.1109/tdmr.2016.2557585

Cited by 27 publications

(23 citation statements)

References 18 publications

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“…3 for a very low ion flux. Significant discrete increases in leakage current are evident for individual ion strikes, consistent with earlier experiments [9,10]. Leakage current increases as long as the beam is on.…”

Section: Introductionsupporting

confidence: 87%

“…In addition, efficient Schottky switching diodes in SiC can be manufactured that exhibit very low on-state voltage and minimal turn-off switching loss with almost no reverserecovery behavior, which makes SiC a good candidate for space power conversion applications. However, the sensitivity of SiC power devices (MOSFETs and diodes) to particle radiation has been found to be higher than expected, given the wide bandgap and high critical electric field, as shown by multiple researchers who have consistently measured significant leakage current increases and single-event burnout in SiC devices [1][2][3][4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Witulski

Arslanbekov

Raman

et al. 2018

IEEE Trans. Nucl. Sci.

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Ion-induced degradation and catastrophic failures in high-voltage SiC Junction Barrier Schottky (JBS) power diodes are investigated. Experimental results agree with earlier data showing discrete jumps in leakage current for individual ions, and show that the boundary between leakage current degradation and a single-event-burnout-like effect is a strong function of LET and reverse bias. TCAD simulations show high localized electric fields under the Schottky junction, and high temperatures generated directly under the Schottky contact, consistent with the hypothesis that the ion energy causes eutectic-like intermixture at the metal-semiconductor interface or localized melting of the silicon carbide lattice.Index Terms-Single event effects, heavy ions, silicon carbide, power diodes, junction barrier schottky (JBS) diode, single-event burnout, thermal coefficients of silicon carbide.

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Section: Introductionsupporting

confidence: 87%

Section: Introductionmentioning

confidence: 99%

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Witulski

Arslanbekov

Raman

et al. 2018

IEEE Trans. Nucl. Sci.

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“…Heavy-ion exposure has been shown to increase reverse leakage current in SiC Schottky diodes, when a sufficient reverse bias is applied during radiation exposure [6], [7], [15]. When an ion beam hits the device at an angle off normal incidence, a similar, but weaker, effect is observed [11].…”

Section: Resultsmentioning

confidence: 99%

“…The silicon power devices typically exhibit separate regions of destructive and nondestructive response as a function of voltage [4], [5]. In addition to these two regions, SiC Schottky devices have been reported to exhibit also a third region where devices suffer from gradual degradation under heavy-ion exposure [2], [6], [7]. This gradual degradation complicates the assessment of SiC parts for catastrophic failures like Single Event Burnout (SEB).…”

Section: Introductionmentioning

confidence: 99%

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

Javanainen

Turowski²,

Galloway

et al. 2017

IEEE Trans. Nucl. Sci.

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“…In the past ten years, scientists in Finland and other countries have studied the influence of high-energy particles on SiC devices. It is reported that Schottky devices, made of SiC [118], Si [119], and GaN [120], gradually decompose under heavy-ion exposure. As the bias level is high enough, SiC Schottky devices also go through catastrophic SEB (single-event burnout) during irradiation.…”

Section: Influence Of High-energy Particles On Semiconductor Devicesmentioning

confidence: 99%

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

Tian

Liu

2018

Electronics

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Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via) technology is the latest packaging technology with the smallest size and quality. As a result, it can effectively reduce parasitic effects, improve work efficiency, reduce the power consumption of the chip, and so on. TSV-based silicon interposers have been applied in the ground environment. In order to meet the miniaturization, high performance and low-cost requirements of aerospace equipment, the adapter substrate is a better choice. However, the transfer substrate, as an important part of 3D integrated circuits, may accumulate charge due to heavy ion irradiation and further reduce the performance of the entire chip package in harsh space radiation environment or cause it to fail completely. Little research has been carried out until now. This article summarizes the research methods and conclusions of the research on silicon interposers and TSV technology in recent years, as well as the influence of high-energy heavy ions on semiconductor devices. Based on this, a series of research methods to study the effect of high-energy heavy ions on TSV and silicon adapter plates is proposed.Electronics 2018, 7, 112 2 of 29 wafer was invented by M.G Smith et al. [2], which opposite surfaces were connected ohmically to the degenerately doped portions to be electrically connected along the thru-connection. With further research and exploration, 2.5D/3D integration technology with TSV realized integrated circuits with advantages of high interconnection density, high performance, low power consumption, and low cost [3,4]. In addition, the core is widely considered to be the leading technology in the field of high density packaging in the future and is an effective way to break through Moore's Law [5][6][7]. Figure 1. Silicon interposer through electrical copper coating technology production: (a) The construction of through-silicon via on the wafer; (b) The dry film etchant is stuck on the wafer, then exposed and etched; (c) Hole plating and pad fabrication by electroplating methods; (d) The photoresist removing. Adapted with permission from [27], Copyright Elsevier, 2016.

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Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

Cited by 27 publications

References 18 publications

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Heavy Ion Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence

TSV Technology and High-Energy Heavy Ions Radiation Impact Review

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