Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions

Kuboyama, S.; Mizuta, Eiichi; Nakada, Y.; Shindou, H.; Michez, A.; Boch, J.; Saigné, Frédéric; Touboul, Antoine

doi:10.1109/tns.2019.2914494

Cited by 21 publications

(13 citation statements)

References 12 publications

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“…With this simulated structure, the impact on SEB triggering of the injected charge through the gate is evaluated. As reported as accurate parameters in previous studies [9], [28], simulated currents and impact ionization rates for the two simulation models (with non-degraded oxide and with gate oxide degradation) are respectively presented in Fig. 13 and in Fig.…”

Section: B) the Effect Of Gate Degradation On Seb Triggeringmentioning

confidence: 77%

Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment

Niskanen

Germanicus

Michez

et al. 2021

IEEE Trans. Nucl. Sci.

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Section: B) the Effect Of Gate Degradation On Seb Triggeringmentioning

confidence: 77%

Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment

Niskanen

Germanicus

Michez

et al. 2021

IEEE Trans. Nucl. Sci.

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“…The heavy-ion experiment was carried out on the heavyion accelerator device of the Chinese Institute of Atomic Energy. The device selected for the experiment is the thirdgeneration SiC MOSFET C3M0120090D produced by Cree company, and its rated current and on-resistance are 23 In the epitaxial layer of the SiC MOSFET, the N+ region is connected to the source, and the channel region is located near the interface between the P-based region and SiO 2 . In the heavy ion experiment, the drain of SiC MOSFET was applied with a forward bias voltage, the source and gate were grounded, and the bias voltage V bias mentioned below all represented the voltage of the drain.…”

Section: Methodsmentioning

confidence: 99%

“…[20] Some existing simulation work believes that SEB and SELC in SiC MOSFET and SiC diode are due to excessive power that cannot be dissipated in time, which further leading to thermal effects. [21][22][23][24] The SEB locations of SiC power devices can be obviously observed, and it is difficult to directly observe the SELC location. [12,13,25] Single event effects seriously restrict the application of SiC power devices in the space field, and the burn-out and degradation of SiC power devices and their effect mechanisms need to be further studied.…”

Section: Introductionmentioning

confidence: 99%

Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

Zhang

X²,

F³

et al. 2023

Chinese Phys. B

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Experiments and simulation studies on 283-MeV I ion induced single event effects of SiC MOSFETs were carried out. When the cumulative irradiation fluence of SiC MOSFET reaches 5×106 ion·cm-2, the drain-gate channel current increases under 200 V drain voltage, the drain-gate channel current and the drain-source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain-gate channel current and drain-source channel current was found to have drain-gate channel current leakage point and local source metal melt, the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining Monte Carlo simulation and TCAD electrothermal simulation, it is found that the initial area of single event burnout may occur at the source-gate corner or the substrate-epitaxial interface, electric field and current density both affect the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain-source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain-gate channel damage.

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“…This explained the similarity of SiC MOSFETs and diodes tolerance to SEB and degradation experimentally measured. Furthermore, the same time scale was identified in the SEB mechanism proposed for SiC Schottky diodes in [24]. By performing 3-D TCAD simulations of a 1.2 kV SiC MOSFET and a 1.2 kV JBS diode [7], Ball et al showed that for approximately 100 ps after the ion-strike occurs, the current transients behave identically in both structures, while after that they begin to deviate.…”

Section: A Seb Mechanism In Sic Power Devicesmentioning

confidence: 68%

High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances

Martinella

Race

Stark

et al. 2023

IEEE Trans. Nucl. Sci.

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Accelerated single event burnout (SEB) tests with 200 MeV protons and atmospheric-neutrons were performed for commercial SiC power MOSFETs with different architectures (i.e., planar gate, asymmetric trench and symmetric trench). The average electric fields over the depletion layer width and the electric field distributions are reported for the tested conditions and compared for the three architectures, confirming the necessity of a lower de-rating for the trench design to protect from SEB, compared to planar ones. In addition to the epitaxial layer design, the influence of other design parameters on the SEB threshold is discussed. Finally, to investigate the presence of precursor damage in the pre-SEB region, a methodology is presented and used to study the radiation-induced degradation of the channel and drift resistances of devices which survived the SEB tests.

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Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions

Cited by 21 publications

References 12 publications

Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment

Neutron-Induced Failure Dependence on Reverse Gate Voltage for SiC Power MOSFETs in Atmospheric Environment

Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances

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