Characterization of Microdose Damage Caused by Single Heavy Ion Observed in Trench Type Power MOSFETs

Kuboyama, S.; Maru, A.; Ikeda, Nobuyuki; Hirao, Toshio; Tamura, Takashi

doi:10.1109/tns.2010.2081686

Cited by 23 publications

(15 citation statements)

References 7 publications

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“…Trapped charge in the gate oxide, in the vicinity of the track, would reduce the threshold voltage resulting in unexpected off-state leakage currents. Other investigators have observed similar microdose effects in UMOS power devices [4,8,9] and Griffoni et al [10] have reported microdose effects induced by heavy ion strikes in the sidewall gate-oxide of FinFETs in advanced CMOS devices.…”

Section: Microdose Effects In Umos Technologymentioning

confidence: 63%

A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors

Galloway

2014

Electronics

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Silicon VDMOS power MOSFET technology is being supplanted by UMOS (or trench) power MOSFET technology. Designers of spaceborne power electronics systems incorporating this newer power MOSFET technology need to be aware of several unique threats that this technology may encounter in space. Space radiation threats to UMOS power devices include vulnerabilities to SEB, SEGR, and microdose. There have been relatively few studies presented or published on the effects of radiation on this device technology. The S-O-A knowledge of UMOS power device degradation and failure under heavy-ion exposure is reviewed.

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Section: Microdose Effects In Umos Technologymentioning

confidence: 63%

A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors

Galloway

2014

Electronics

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“…Many hardening solutions to SEB of power DMOSFETs have been extensively investigated and tested these years. For power UMOSFETs [22]- [24], the research of SEB characteristic, especially for how to design hardened structure to prevent SEB need to be studied [25]. The Schottky contact is often used to improve the reverse recovery characteristics in power MOSFETs [26], [27].…”

Section: Introductionmentioning

confidence: 99%

Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

Wang

Zhang

Cao

et al. 2014

IEEE Trans. Power Electron.

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This paper investigates the single-event burnout (SEB) simulation results for both the standard and hardened structure of power U-shape gate MOSFETs (UMOSFETs). The Schottky source is proposed to reduce the work of the parasitic bipolar transistor inherent to the device. The hardened structure of power UMOSFETs with the Schottky source and N buffer layer is given, which can work normally and improve the SEB performance effectively. Both 70-and 120-V power MOSFETs are simulated and discussed in this paper. The SEB threshold voltages are increased to more than 94 percent of the breakdown voltages for both 70-and 120-V hardened structure, compared to 54 percent for standard power UMOSFETs.Index Terms-Hardened structure, power UMOSFET, Schottky source, single-event burnout (SEB).

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“…On the other hand, a simplified heavy-ion model was additionally included using the SINGLEEVENTUPSET statement to investigate the SEB performance. Moreover, in order to simulate an ionising impact within a structure, a function that generates the electron-hole pairs at the vertical direction in a specific area was defined and computed using equation (2).…”

Section: Simulation Setupmentioning

confidence: 99%

“…High-frequency power switching systems usually prefer power MOSFETs, especially trench MOSFETs in space applications. However, its reliability is affected by the radiation effects induced by the energetic heavy ions in the radiation environment [1][2][3]. Among the destructive radiation effects is the Single-Event Effects (SEE), which is capable of permanently damaging the device.…”

Section: Introductionmentioning

confidence: 99%

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

Krishnamurthy

Kannan

Hussin

2020

Mater. Res. Express

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This study proposes the High-κ dielectric Trench Shielded power UMOSFET (HK TS-UMOSFET) to be assessed using the two-dimensional numerical simulations. The simulations are employed to evaluate HK TS-UMOSFETs susceptibility to single-event burnout (SEB) mechanism. Based on the findings, the influence of alternative high permittivity gate dielectrics to silicon dioxide (SiO 2 ) in TS-UMOSFET was discussed. Furthermore, in order to improve the performance of the device, its electrical behaviour was simulated with several high-κ dielectrics including Al 2 O 3 , Si 3 N 4 and Aluminium Nitride (AlN). When heavy ions strike the sensitive areas of the device, the electric field distribution and SEB threshold values were extracted. Based on the values yielded, (AlN) was identified as a promising high-κ material to achieve SEB-hardened TS-UMOSFET compared to the other highκ dielectrics. In conclusion, with (AlN), the HK TS-UMOSFET offers a high SEB tolerance and improved electrical characteristics.

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Characterization of Microdose Damage Caused by Single Heavy Ion Observed in Trench Type Power MOSFETs

Cited by 23 publications

References 7 publications

A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors

A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors

Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics

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