A procedure has been implemented for a quantitative aluminum-doping profiling of m-scale aluminum-induced solid-phaseepitaxy ͑SPE͒ Si islands formed at 400°C. The aluminum concentration was measured to be 1-2 ϫ 10 19 cm −3 , which is about 10 times higher than previously reported electrical activation levels. The elemental concentration was measured by secondary-ionmass-spectroscopy ͑SIMS͒ on arrays of SPE Si islands grown by a recently developed process that allows control of the island geometry.
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