Accurate SIMS Doping Profiling of Aluminum-Doped Solid-Phase Epitaxy Silicon Islands

Civale, Yann; Nanver, L.K.; Alberici, S.; Gammon, Andrew; Kelly, I.

doi:10.1149/1.2836739

Cited by 9 publications

(6 citation statements)

References 13 publications

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“…The low resistivity measured suggests an Al impurity concentration of ∼1 × 10 19 cm −3 (7 × 10 18 to 2 × 10 19 cm −3 ) extracted from a bulk p-type single crystal silicon curve, which is higher than the value of 5−6 × 10 18 cm −3 that is extrapolated from a solubility diagram for Al in Si at 550 °C . While more detailed study is underway to determine the actual Al concentration and distribution, Al incorporation above the solubility limit is possible, as Al concentrations ranging from 3 × 10 19 to 10 20 cm −3 have been reported for aluminum induced crystallization of silicon at 375−525 °C. − Nevertheless, the measured resistivity here is much lower than the values of 10 4 −10 5 Ω-cm obtained for nominally undoped Au catalyzed Si NWs grown in our reactor . The I − V curves obtained from a four-point measurement (Figure c) and a three-point measurement providing the resistance of the gap and one contact (Figure d) are both linear and differ by only an additional contact resistance of about 150 Ω.…”

mentioning

confidence: 91%

Fabrication and Electrical Properties of Si Nanowires Synthesized by Al Catalyzed Vapor−Liquid−Solid Growth

Weng

Redwing

et al. 2009

Nano Lett.

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The synthesis of epitaxially oriented Si nanowires at high growth rates (>1 microm/min) was demonstrated on (111) Si substrates using Al as the catalyst. The use of high H(2) and SiH(4) partial pressures was found to be effective at reducing problems associated with Al oxidation and nanowire nucleation, enabling growth of high aspect ratio structures at temperatures ranging from 500 to 600 degrees C with minimal tapering of the diameter. Because of the high growth rate observed, the Al catalyst is believed to be in the liquid state during the growth. Four-point resistance measurements and back-gated current-voltage measurements indicate that the wires are p-type with an average resistivity of 0.01 +/- 0.004 Omega-cm. These results suggest that Al is incorporated into the Si nanowires under these conditions at concentrations higher than the solubility limit (5-6 x 10(18) cm(-3)) for Al in Si at 550 degrees C. This work demonstrates that Al can serve as both an effective catalyst and p-type dopant for the growth of Si nanowires.

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confidence: 91%

Fabrication and Electrical Properties of Si Nanowires Synthesized by Al Catalyzed Vapor−Liquid−Solid Growth

Weng

Redwing

et al. 2009

Nano Lett.

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“…On both patterned and nonpatterned crystalline Si substrates this process produced high-quality monocrystalline Si (c-Si) islands, which are uniformly doped with Al. 10 Focus was placed on the use of these p + SPE-Si islands for the fabrication of devices containing p + -n diodes and p + contacts. Device quality was found to be exceptionally good for a large range of device geometries and process parameters, including temperatures down to 400°C.…”

Section: Introductionmentioning

confidence: 99%

On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon

Civale

Vastola

Nanver

et al. 2009

Journal of Elec Materi

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Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of ''free'' Si at the Al/a-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate.

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“…It is important to mention here that first-principles calculations demonstrated that substitutional Al is the most energetically favorable configuration of Al-related defects in a Si lattice [24,25]. Nevertheless, several previous studies demonstrated that the measured Al concentrations (∼1×10 17 -2×10 21 atom cm −3 ) are significantly greater than the measured Al dopant concentrations (∼10 12 -10 19 atom cm −3 ) [19][20][21][22][23], which indicates that not all Al atoms are electrically active and hence they may possibly form other inactive complexes in a Si lattice. For instance, the Al substitutional-self-interstitial (Al Si -Si i ) complex is electrically inactive [25].…”

Section: Introductionmentioning

confidence: 78%

“…Interestingly, unlike other dopants, Al incorporation in Si is often associated with very poor electrical activity [7][8][9][14][15][16][17][18][19][20][21][22][23]. It is important to mention here that first-principles calculations demonstrated that substitutional Al is the most energetically favorable configuration of Al-related defects in a Si lattice [24,25].…”

Section: Introductionmentioning

confidence: 94%

Evidence of sub-10 nm aluminum-oxygen precipitates in silicon

et al. 2016

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In this research, ultraviolet laser-assisted atom-probe tomography (APT) was utilized to investigate precisely the behavior at the atomistic level of aluminum impurities in ultrathin epitaxial silicon layers. Aluminum atoms were incorporated in situ during the growth process. The measured average aluminum concentration in the grown layers exceeds by several orders of magnitude the equilibrium bulk solubility. Three-dimensional atom-by-atom mapping demonstrates that aluminum atoms precipitate in the silicon matrix and form nanoscopic precipitates with lateral dimensions in the 1.3 to 6.2 nm range. These precipitates were found to form only in the presence of oxygen impurity atoms, thus providing clear evidence of the longhypothesized role of oxygen and aluminum-oxygen complexes in facilitating the precipitation of aluminum in a silicon lattice. The measured average aluminum and oxygen concentrations in the precipitates are ∼10 ± 0.5 at.% and ∼4.4 ± 0.5 at.%, respectively. This synergistic interaction is supported by first-principles calculations of the binding energies of aluminum-oxygen dimers in silicon. The calculations demonstrate that there is a strong binding between aluminum and oxygen atoms, with Al-O-Al and O-Al-Al as the energetically favorable sequences corresponding to precipitates in which the concentration of aluminum is twice as large as the oxygen concentration in agreement with APT data.

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Accurate SIMS Doping Profiling of Aluminum-Doped Solid-Phase Epitaxy Silicon Islands

Cited by 9 publications

References 13 publications

Fabrication and Electrical Properties of Si Nanowires Synthesized by Al Catalyzed Vapor−Liquid−Solid Growth

Fabrication and Electrical Properties of Si Nanowires Synthesized by Al Catalyzed Vapor−Liquid−Solid Growth

On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon

Evidence of sub-10 nm aluminum-oxygen precipitates in silicon

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