Copper–titanium thin film interaction

Effect of Scanning Speed on the Surface Roughness of Laser Metal Deposited Copper on Titanium Alloy

“…This however indicated that the copper can only diffuse in titanium through the grain boundaries or through compound formation. This copper however, can be used for power devices due to the ability to electro-migrate 14 .…”

Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation

“…Considerable effort has been spent on the barrier performance of TiN films against thermal diffusion of Cu [8][9][10][11][12][13][14][15][16]. It was generally acceded that the failure was caused by copper diffusion through the grain boundaries of TiN to form copper compounds [13][14][15][16]. However, the reported failure temperatures differ among researchers, ranging from 400 to 850 °C [8][9][10][11][12].…”

Structural investigation of the c(√2×5√2)R45° surface alloy formed by Ti deposition on Cu(001)

“…With this activation energy, even at RT Ti adatoms should be incorporated into the outermost layer of the surface before reacting with the CO molecules arriving from the gas phase. However, at RT the alloying is limited to the outermost layer since the migration in the second and deeper layers would requires the migration of copper vacancies in those layers, a process with significantly higher activation energies (the activation energy for diffusion of titanium in copper was found to be 1.7 eV [17]). At RT, once the outermost layer is saturated with Ti, the exceeding amount of Ti remains on the surface and reacts with the CO molecules arriving from the gas phase.…”