Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation

Ee, Y.C.; Chen, Zhong; Law, S. B.; Xu, Shuyan; Yakovlev, N.L.; Lai, M.Y.

doi:10.1016/j.apsusc.2005.12.152

Cited by 13 publications

(10 citation statements)

References 15 publications

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“…Las muestras presentan fases cristalinas con una orientación preferencial (220), excepto la muestra M2 que presenta una orientación preferencial (200). La orientación cristalina (220), es más eficiente que la (111) y (200), ideal para poder utilizarse en recubrimientos como barreras para los circuitos integrados (Ee et al, 2006a(Ee et al, , 2006b, garantizando así el éxito de los dispositivos electrónicos. No obstante, esta orientación cristalina preferencial no es tan fácil de obtener, ya que la estructura columnar del TiN, presenta la orientación cristalina preferencial (111) ó (200).…”

Section: Resultados Y Discusionesunclassified

“…En general, los materiales elegidos para este fin son metales refractarios u sus nitruros, tales como TiN, TaN y TiZrN (Yeh et al, 2008;Lee y Kuo, 2007), dado que poseen estabilidad térmica y buenas propiedades eléctricas. De igual manera se ha encontrado que sistemas ternarios como el de TiSiN (Ee et al, 2006a;Watanabe et al, 2003), WSiN (Fleming et al, 1998;Nakajima et al, 1997), TaSiN (Letendu et al, 2006;Lee et al, 1999) ó ZrSiN (Zhang et al, 2007) son capaces de sustituir al TiN (Bonitz et al, 2005y Cheng et al, 2005 en la fabricación de dispositivos dieléctricos como barreras de difusión, debido al mezclado de su microestructura, el cual se ha encontrado una notable mejora en sus propiedades, debido principalmente a la formación de una fase nanocristalina embebida en una matriz amorfa, generalmente de nitruro de silicio (Gao et al, 2004;Procházka et al, 2004).…”

Section: Introductionunclassified

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Influencia del Flujo de Nitrógeno en la Estructura, Dureza y Resistividad de Recubrimientos de TiSiNO

et al. 2009

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Recubrimientos de TiSiNO fueron fabricados por la técnica de erosión catódica reactiva por corriente directa sobre sustratos de acero y silicio, utilizando un blanco de Ti y una pequeña placa de Si sobre una atmósfera reactiva de nitrógeno, oxigeno y argón. Usando el método de Warren-Averbach se analizaron los cambios estructurales de las muestras en función de la variación del flujo de nitrógeno. Cálculos estequiométricos, obtenidos de la técnica de espectroscopia de energía dispersada y corroborados por espectroscopia de descarga luminiscente, muestran que los recubrimientos se encuentran en la región de solución sólida de TiSi x N(O y) y SiN x O y , dominando la fase del oxinitruro de titanio. La muestra fabricada sobre sustratos de acero y silicio a un flujo de nitrógeno de 3 sscm, presentó el valor de dureza más alto y el valor de resistividad más bajo, respectivamente, debido a su estructura, orientación cristalina preferencial y fases cristalinas presentes en ella.

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Section: Resultados Y Discusionesunclassified

Section: Introductionunclassified

Influencia del Flujo de Nitrógeno en la Estructura, Dureza y Resistividad de Recubrimientos de TiSiNO

et al. 2009

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“…One of the crucial features for successful device performance is the availability of a suitable long-term stable high temperature metallization scheme, typically including a diffusion barrier layer, which prevents a metallurgical reaction between metallization and semiconductor substrate, a contact layer and an interconnect layer. Ternary amorphous metallic thin films such as Ti–Si–N [ 1 , 2 , 3 , 4 ], Mo–Si–N [ 5 , 6 ], Zr–Si–N [ 7 , 8 , 9 , 10 ], Ta–Si–N [ 11 , 12 , 13 , 14 , 15 , 16 ], and W–Si–N [ 17 , 18 , 19 , 20 , 21 , 22 , 23 ] have received considerable attention for high temperature diffusion barrier applications. These materials have shown to be chemically inert against reactions with gold [ 4 , 11 , 24 ], silver [ 11 ], copper [ 12 , 13 , 14 , 16 , 17 , 20 ], aluminum [ 18 , 25 ], and platinum [ 26 , 27 , 28 ] metallization at elevated temperatures, thereby providing the low diffusivities required for a diffusion barrier.…”

Section: Introductionmentioning

confidence: 99%

A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems

et al. 2016

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In this paper, we present and discuss our new WSi–WSiN–Pt metallization scheme for SiC-based microsystems for applications in harsh environments. Stoichiometric material WSi was selected as contact material for SiC. The diffusion barrier material WSiN was deposited from the same target as the contact material in order to limit the number of different chemical elements in the scheme. Our scheme was kept as simple as possible regarding the number of layers and chemical elements. Our scheme shows very good long-term stability and suitability for SiC-based microsystems. The experimental evaluation concept used here includes a combination of physical, electrical, and mechanical analysis techniques. This combined advance is necessary since modern physical analysis techniques still offer only limited sensitivity for detecting minimal changes in the metallization scheme.

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“…Recently, it is frequently reported that some additives such as Al and Si can improve the properties of nitride coatings [2] . In microelectronic field, ternary thin films, such as Ti-Si-N [3] and Ta-Si-N [4] films also exhibit excellent diffusion barriers performance. Veprek and Reiprich [5] suggested that composite materials consisting of crystalline refractory transition metal nitrides such as ZrN, NbN, VN, W 2 N and TiN with amorphous Si 3 N 4 are the most promising candidate.…”

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confidence: 99%

Study on Microstructure and Properties of Zr-Si-N Films with Different Nitrogen Partial Pressures

Wang

Song

et al. 2009

Rare Metal Materials and Engineering

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Zr-SiN films were prepared by radio frequency powered reactive magnetron sputtering at different N2 partial pressures. The influences of N2 partial pressure on the microstructure and properties of Zr-SiN films were studied. The results reveal that the Zr/Si ratio decreases and the sheet resistance increases as the N2 partial pressure increases. The microstructures of Zr-SiN films are composed of nano-crystallite ZrN embedded into amorphous matrix of SiNx phase and a small quantity of Zr2Si produced at low N2 partial pressure. The appearance of Zr2Si phase is related to the low nitridation level. The microhardness of Zr-SiN film decreases with the increase of N2 partial pressure at the N2 partial pressure of 0.03 Pa, the microhardness of Zr-SiN films is possessed of maximum value of about 22.5 GPa. The phenomenon that high N2 partial pressure results in low microhardness in Zr-SiN films may be related to the lattice distortion induced by the addition of Si.

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Copper diffusion in Ti–Si–N layers formed by inductively coupled plasma implantation

Cited by 13 publications

References 15 publications

Influencia del Flujo de Nitrógeno en la Estructura, Dureza y Resistividad de Recubrimientos de TiSiNO

Influencia del Flujo de Nitrógeno en la Estructura, Dureza y Resistividad de Recubrimientos de TiSiNO

A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems

Study on Microstructure and Properties of Zr-Si-N Films with Different Nitrogen Partial Pressures

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