A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems

Ngo, Ha-Duong; Mukhopadhyay, Biswajit; Mackowiak, Piotr; Krohnert, Kevin; Ehrmann, O.; Lang, Klaus‐Dieter

doi:10.3390/mi7100193

Cited by 3 publications

(2 citation statements)

References 29 publications

(35 reference statements)

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“…As one of the third-generation semiconductor materials, SiC has a large energy band gap, superior mechanical properties, and extreme chemical inertness. Accordingly, the SiC-based pressure sensors are considered to be the most promising semiconductor for use in extreme environments, such as high temperatures, strong corrosion, and high radiation [11,12,13]. Silicon carbide has more than 250 crystal types, while it has three major crystal types, such as 3C-, 4H-, and 6H- [14,15].…”

Section: Introductionmentioning

confidence: 99%

Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer

Liang

Cheng

et al. 2019

Micromachines

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In this work, the piezoresistive properties of heavily doped p-type 4H-SiC at room temperature were investigated innovatively. It was verified by a field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and laser Raman spectroscopy (LRS) that the crystal quality of the epitaxial layer was good. The doping concentration and thickness of the epitaxial layer were measured by secondary ion mass spectrometry (SIMS) to be ~1.12 × 1019 cm−3 and ~1.1 µm, respectively. The 4H-SiC cantilever beam along false[11−00false] crystal orientation was fabricated, and the fixed end of the cantilever beam was integrated with longitudinal and transverse p-type 4H-SiC piezoresistors. A good ohmic contact was formed between Ni/Ti/Al/Au and a p-type 4H-SiC piezoresistor under nitrogen environment annealing at 1050 °C for 5 min. The free end of the cantilever beam was forced to cause strain on the p-type 4H-SiC piezoresistor, and then the resistances were measured by a high precision multimeter. The experimental results illustrated that longitudinal and transverse gauge factors (GFs) of the p-type 4H-SiC piezoresistors were 26.7 and −21.5, respectively, within the strain range of 0–336µε. In order to further verify the electro-mechanical coupling effect of p-type 4H-SiC, the piezoresistors on the beam were connected to the Wheatstone full-bridge circuit and the output changes were observed under cyclic loading of 0–0.5 N. The measuring results revealed that the transducer based on the 4H-SiC piezoresistive effect exhibited good linearity and hysteresis, which confirmed that p-type 4H-SiC has the potential for pressure or acceleration sensing applications.

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Section: Introductionmentioning

confidence: 99%

Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer

Liang

Cheng

et al. 2019

Micromachines

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“…Sensing applications in high temperature and harsh‐environments require advanced materials that can fulfill the required combination of physical, thermal, electrical and mechanical properties, such as a high melting point, good oxidation and corrosion resistance, high‐temperature thermal/chemical stability and electrical conductivity at elevated temperatures . Therefore, refractory transition metal silicides (MoSi 2 , WSi 2 , TaSi 2 etc.…”

Section: Introductionmentioning

confidence: 99%

Stability and electrical properties of MoSi₂‐ and WSi₂‐oxide electroconductive composites

et al. 2017

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MoSi 2 -and WSi 2 -based electroconductive ceramic composites were fabricated using 40-80 vol% fine-and coarse-Al 2 O 3 , and ZrO 2 particles (refractory oxides) after sintering in argon. Their chemical and thermal stability was tested between 1400°C-1600°C for up to 48 hours. X-ray diffraction analysis showed the formation of secondary 5-3 metal silicide (Mo 5 Si 3 , W 5 Si 3 ) and silica phases on the grain boundaries and surface. The fraction of the W 5 Si 3 (11.4-38.8 vol%) was significantly higher than that of the Mo 5 Si 3 (3.3-7.3 vol%) in the composites after annealing at 1400°C for 48 hours. The rates of grain growth in the composites (0.013-0.023 lm/h) were highly decreased by a grain-boundary pinning effect.This effect was relatively better with the addition of the coarse-grained oxides due to their more homogeneous distribution throughout the microstructure. The 20-80 vol% MoSi 2 -Al 2 O 3 (fine-grained) composite exhibited an electrical conductivity of 8.8 S/cm at 900°C. At the 60 vol% silicide content, MoSi 2 -Al 2 O 3 (coarse-grained) and WSi 2 -Al 2 O 3 (fine-grained) showed higher electrical conductivity (126-128 S/cm) at 900°C. The density, porosity level, particle distribution, intrinsic conductivity of silicide phase, particle size, and fraction of the secondary 5-3 silicide phase highly influenced their electrical properties.

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Piezoresistive Pressure Sensors for Applications in Harsh Environments—A Roadmap

Ngo

Ehrmann

Schuster

et al. 2018

Modern Sensing Technologies

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A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems

Cited by 3 publications

References 29 publications

Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer

Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer

Stability and electrical properties of MoSi₂‐ and WSi₂‐oxide electroconductive composites

Piezoresistive Pressure Sensors for Applications in Harsh Environments—A Roadmap

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A WSi–WSiN–Pt Metallization Scheme for Silicon Carbide-Based High Temperature Microsystems

Cited by 3 publications

References 29 publications

Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer

Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer

Stability and electrical properties of MoSi2‐ and WSi2‐oxide electroconductive composites

Piezoresistive Pressure Sensors for Applications in Harsh Environments—A Roadmap

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Product

Resources

About

Stability and electrical properties of MoSi₂‐ and WSi₂‐oxide electroconductive composites