Piezoresistive Pressure Sensors for Applications in Harsh Environments—A Roadmap

Ngo, Ha-Duong; Ehrmann, O.; Schuster, Martin; Lang, Klaus‐Dieter

doi:10.1007/978-3-319-99540-3_12

Cited by 10 publications

(5 citation statements)

References 21 publications

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Section: Resultsmentioning

confidence: 99%

“…Si is not suitable for operation at temperatures exceeding 200 °C due to its narrow energy bandgap (1.12 eV) and the significant reduction of elastic modulus at high temperatures. [ 46,47 ] On the other hand, Ga 2 O 3 is expected to have significant potential for piezoresistive sensors, even at higher operating temperatures, thanks to its significantly higher bandgap (4.5–4.9 eV). [ 37 ] The electrical properties of Ga 2 O 3 have been utilized in an oxygen sensor operating at 1000 °C, demonstrating good thermal stability.…”

Section: Resultsmentioning

confidence: 99%

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Numerical Simulation of Highly Sensitive Ga₂O₃ Pressure Sensor

Than,

Dao,

Takaki

2024

Physica Status Solidi (a)

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This article presents beta‐gallium oxide (β‐Ga2O3) micro electro mechanical systems (MEMS) strain/pressure sensors as a way to enhance sensitivity. The model consists of four piezoresistive strain gauges connected in a Wheatstone bridge configuration. The MEMS model is simulated from 0 Pa to 50 kPa, resulting in an output signal range of −3–16 mV and a responsivity of 0.38 mV kPa−1. The simulation also shows that as temperature increases, the resistance of the piezoresistive material in the MEMS decreases, leading to changes in the output signals. The reliable device effectively utilizes the full Wheatstone bridge configuration to compensate for temperature‐related influences. These early results suggest that Ga2O3‐based MEMS devices have great potential for use in high‐temperature pressure sensor applications in the future.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Numerical Simulation of Highly Sensitive Ga₂O₃ Pressure Sensor

Than,

Dao,

Takaki

2024

Physica Status Solidi (a)

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“…State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University, Xi'an 710049, China. 2 School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an 710049, China.…”

Section: Author Detailsmentioning

confidence: 99%

Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments

Fang

Qiang

et al. 2023

Microsyst Nanoeng

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Microelectromechanical system (MEMS) pressure sensors based on silicon are widely used and offer the benefits of miniaturization and high precision. However, they cannot easily withstand high temperatures exceeding 150 °C because of intrinsic material limits. Herein, we proposed and executed a systematic and full-process study of SiC-based MEMS pressure sensors that operate stably from −50 to 300 °C. First, to explore the nonlinear piezoresistive effect, the temperature coefficient of resistance (TCR) values of 4H-SiC piezoresistors were obtained from −50 to 500 °C. A conductivity variation model based on scattering theory was established to reveal the nonlinear variation mechanism. Then, a piezoresistive pressure sensor based on 4H-SiC was designed and fabricated. The sensor shows good output sensitivity (3.38 mV/V/MPa), accuracy (0.56% FS) and low temperature coefficient of sensitivity (TCS) (−0.067% FS/°C) in the range of −50 to 300 °C. In addition, the survivability of the sensor chip in extreme environments was demonstrated by its anti-corrosion capability in H2SO4 and NaOH solutions and its radiation tolerance under 5 W X-rays. Accordingly, the sensor developed in this work has high potential to measure pressure in high-temperature and extreme environments such as are faced in geothermal energy extraction, deep well drilling, aeroengines and gas turbines.

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“…In addition, a special light source, optical modulation and detection equipment are required for optical fiber pressure sensors, which are not convenient for use. Piezoresistive sensors are produced by micro and nano manufacturing technology, which is circumscribed as small size, high precision, low power consumption, simple measurement circuit and mass production [ 19 , 20 ], which is very suitable for integrated applications.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test

Zhao

Wang

et al. 2023

Micromachines

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Due to material plastic deformation and current leakage at high temperatures, SOI (silicon-on-insulator) and SOS (silicon-on-sapphire) pressure sensors have difficulty working over 500 °C. Silicon carbide (SiC) is a promising sensor material to solve this problem because of its stable mechanical and electrical properties at high temperatures. However, SiC is difficult to process which hinders its application as a high-temperature pressure sensor. This study proposes a piezoresistive SiC pressure sensor fabrication method to overcome the difficulties in SiC processing, especially deep etching. The sensor was processed by a combination of ICP (inductive coupled plasma) dry etching, high-temperature rapid annealing and femtosecond laser deep etching. Static and dynamic calibration tests show that the accuracy error of the fabricated sensor can reach 0.33%FS, and the dynamic signal response time is 1.2 μs. High and low temperature test results show that the developed sensor is able to work at temperatures from −50 °C to 600 °C, which demonstrates the feasibility of the proposed sensor fabrication method.

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Piezoresistive Pressure Sensors for Applications in Harsh Environments—A Roadmap

Cited by 10 publications

References 21 publications

Numerical Simulation of Highly Sensitive Ga₂O₃ Pressure Sensor

Numerical Simulation of Highly Sensitive Ga₂O₃ Pressure Sensor

Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments

Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test

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Piezoresistive Pressure Sensors for Applications in Harsh Environments—A Roadmap

Cited by 10 publications

References 21 publications

Numerical Simulation of Highly Sensitive Ga2O3 Pressure Sensor

Numerical Simulation of Highly Sensitive Ga2O3 Pressure Sensor

Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments

Femtosecond Laser Processing Assisted SiC High-Temperature Pressure Sensor Fabrication and Performance Test

Contact Info

Product

Resources

About

Numerical Simulation of Highly Sensitive Ga₂O₃ Pressure Sensor

Numerical Simulation of Highly Sensitive Ga₂O₃ Pressure Sensor